The successful development of Actinic Pattern Mask Inspection (APMI) has enabled the high-volume manufacturing of advanced chips, such as N5 and N3, due to the production of defect-free masks by tsmc's mask shop. This accomplishment can be attributed to the utilization of an innovative Extreme Ultraviolet (EUV) inspector and Graphics Processing Unit (GPU)-based defect detection with Artificial Intelligence (AI) assistance. The application of EUV inspector unleashed pellicle inspection to prolong mask operation periods in wafer foundries. Besides, the improving in the manufacturing efficiency via automation also boost the productivity in the mask shop. According to our previous report in BACUS 2023, the improvement by performing various approaches in the novel Laser-Produced Plasma (LPP) system enabled tsmc to capture EUV image with high stability. The continual improving in the system in later keep reducing the vibration of the crucible and hence improve the tin stability. Furthermore, tsmc developed a GPU-based inspection system, which allowed for flexible algorithm development compared to FPGA. The ML-based rendering model aligned features with tool images and reduced image residue. Therefore, the final inspected image could be possessed with high SNR in advanced node and aggressive OPC compared to DUV inspector. Additionally, the final inspection results will be processed via a Deep Learning (DL) based model, reducing false positives, and implementing auto-defect classification. By combining these contributions, the actinic tools were able to streamline the manufacturing flow and fulfill the requirements for massive production significantly.
Given the successful development in actinic pattern mask inspection (APMI), high-volume manufacturing of advanced chips including N5 and N3 was realized due to the defect-free masks provided by the TSMC mask shop. This achievement was attributed to the newly developed EUV source and GPU-based defect detection with machine learning (ML) assistance. Unlike conventional approaches which sustain less than two weeks, the rotated crucible fed by Sn fuel in the LPP (Laser-produced plasma) system provided one month of operating stability with ultra-low tin consumption. The newly developed LPP EUV light source has been moved towards double IR power to produce higher EUV photon counts, resulting in better throughput and inspection sensitivity. It enables captured images to possess an effective signalto-noise ratio (SNR) and reasonable inspection nuisance counts. The common technique challenges, Sn auto-refuel and debris mitigation, were overcome by auto-refuel and reuse, debris mitigation, and plasma position control. Moreover, the LPP system also showed its capability in performing pellicle inspection to prolong mask operation periods in wafer foundries. For the GPU-based inspection system, it provided the feasibility and flexibility in algorithm development compared to the FPGA approach. The TSMC developed machine-learning (ML) based rendering model played a key role in aligning features with tool images in D2D mode, as well as residue reduction of D2DB mode. All rendering models were implemented by CUDA coding and running on TSMC-customized GPU architecture to fulfill the goal of high-speed computation and defect capture rate that met production specifications. Combining with the ML model, proper detectors were designed for each specific feature, such as SRAF and curvy OPC design, and the performance of auto defect classification (ADC) with the model has been proven. By integrating all the work, it enabled the actinic tools to fulfill the requirement of massive production significantly.
The EUV reticle masking process has enabled the creation of smaller and more intricate integrated circuits, which are essential components of modern electronic devices. However, ensuring defect-free control and evaluation in the cutting-edge EUV reticle masking process is a challenging task. Currently, every potential defect must be judged by wafer printing assessment for almost 3 days, which can be both time-consuming and expensive, and even commercial approaches are incapable of meeting the demands of high-volume manufacturing. In this paper, we successfully developed the EUV Actinic Mask Review System (AMRS) to emulate wafer printability behaviors, utilizing a stable LPP EUV source with over 95% available time and a specialized TSMC-made SMO to achieve high throughput for more than 80 sites/hr. In addition, various EUV resist models have been developed to emulate the risk defect printing assessment with good matching results, and an in-house automation EUV defect analysis platform was developed to achieve fast and accurate areal image measurement. With this solution, all EUV repaired and potential defects, including 18nm HP L/S, ML defects, and even through EUV pellicle defects, can be addressed in technology nodes N5, N3, and beyond N3, on the brand-new actinic review platform. The development of the EUV Actinic Mask Review System represents a significant advancement in ensuring the quality and reliability of semiconductor devices. It provides a practical solution to the challenges posed by the EUV reticle masking process and enables the production of defect-free integrated circuits, paving the way for the continued innovation and progress of the semiconductor industry.
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