Dr. Yi Zou Profile

Dr. Yi Zou

Senior Project Engineer at GLOBALFOUNDRIES Inc

SPIE Involvement:

Author

Publications (22)

Proceedings Article | 18 March 2016 Paper

Paper

EUV patterned templates with grapho-epitaxy DSA at the N5/N7 logic nodes

Roel Gronheid, Carolien Boeckx, Jan Doise, Joost Bekaert, Ioannis Karageorgos, Julien Ruckaert, Boon Teik Chan, Chenxi Lin, Yi Zou

Proceedings Volume 9776, 97761W (2016) https://doi.org/10.1117/12.2219876

KEYWORDS: Directed self assembly, Extreme ultraviolet, Optical lithography, Lithography, Extreme ultraviolet lithography, Logic, Scanners, Etching, Immersion lithography, Stochastic processes, Personal protective equipment, Photomasks, Scanning electron microscopy, Metrology

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Proceedings Article | 17 April 2014 Paper

Paper

Integration of an EUV metal layer: a 20/14nm demo

Craig Higgins, Erik Verduijn, Xiang Hu, Liang Wang, Mandeep Singh, Jerome Wandell, Sohan Mehta, Jean Raymond Fakhoury, Mark Zaleski, Yi Zou, Hui Peng Koh, Pawitter Mangat

Proceedings Volume 9048, 90481Q (2014) https://doi.org/10.1117/12.2048285

KEYWORDS: Photomasks, Extreme ultraviolet, Semiconducting wafers, Extreme ultraviolet lithography, Metals, Optical lithography, Optical proximity correction, Overlay metrology, Deep ultraviolet, Inspection

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Proceedings Article | 28 March 2014 Paper

Paper

A full-chip DSA correction framework

Wei-Long Wang, Azat Latypov, Yi Zou, Tamer Coskun

Proceedings Volume 9049, 90491J (2014) https://doi.org/10.1117/12.2045982

KEYWORDS: Optical proximity correction, Etching, Computer simulations, Monte Carlo methods, Printing, Lithography, Detection and tracking algorithms, Optimization (mathematics), Deep ultraviolet, Directed self assembly

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Proceedings Article | 28 March 2014 Paper

Paper

Simulations of spatial DSA morphology, DSA-aware assist features and block copolymer-homopolymer blends

Azat Latypov, Tamer Coskun, Grant Garner, Moshe Preil, Gerard Schmid, Ji Xu, Yi Zou

Proceedings Volume 9049, 904908 (2014) https://doi.org/10.1117/12.2046082

KEYWORDS: Monte Carlo methods, Atrial fibrillation, Etching, Optical lithography, Polymers, Molecules, Polymethylmethacrylate, Roentgenium, Computer simulations, Directed self assembly

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Proceedings Article | 18 March 2014 Paper

Paper

EUV OPC modeling and correction requirements

Tamer Coskun, Tom Wallow, Gek Soon Chua, Keith Standiford, Craig Higgins, Yi Zou

Proceedings Volume 9048, 90480W (2014) https://doi.org/10.1117/12.2046341

KEYWORDS: Photomasks, 3D modeling, Optical proximity correction, Data modeling, Extreme ultraviolet, Calibration, Semiconducting wafers, Critical dimension metrology, Extreme ultraviolet lithography, Data processing

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Proceedings Article | 1 April 2013 Paper

Paper

Evaluation of methods to improve EUV OPC model accuracy

Tamer Coskun, Chris Clifford, Germain Fenger, Gek Soon Chua, Keith Standiford, Ralph Schlief, Craig Higgins, Yi Zou

Proceedings Volume 8679, 86790V (2013) https://doi.org/10.1117/12.2009281

KEYWORDS: Optical proximity correction, Photomasks, Extreme ultraviolet, Calibration, Extreme ultraviolet lithography, Deep ultraviolet, Lithography, Metrology, Data modeling, Semiconducting wafers

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Proceedings Article | 26 March 2013 Paper

Paper

Exploration of the directed self-assembly based nano-fabrication design space using computational simulations

Azat Latypov, Moshe Preil, Gerard Schmid, Ji Xu, He Yi, Kenji Yoshimoto, Yi Zou

Proceedings Volume 8680, 868013 (2013) https://doi.org/10.1117/12.2011238

KEYWORDS: Monte Carlo methods, Optical proximity correction, Computer simulations, Polymers, Annealing, Polymethylmethacrylate, Deep ultraviolet, Integrated circuits, Nanofabrication, Directed self assembly

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Proceedings Article | 30 June 2012 Paper

Paper

Systematic study of source mask optimization and verification flows

Yu Ben, Azat Latypov, Gek Soon Chua, Yi Zou

Proceedings Volume 8441, 84410U (2012) https://doi.org/10.1117/12.965565

KEYWORDS: Source mask optimization, Molybdenum, Optical proximity correction, Electroluminescence, Resolution enhancement technologies, Tolerancing, Critical dimension metrology, Semiconducting wafers, Data modeling, Calibration

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Proceedings Article | 23 March 2012 Paper

Paper

EUV OPC for the 20-nm node and beyond

Chris Clifford, Yi Zou, Azat Latypov, Oleg Kritsun, Thomas Wallow, Harry Levinson, Fan Jiang, Deniz Civay, Keith Standiford, Ralph Schlief, Lei Sun, Obert Wood, Sudhar Raghunathan, Pawitter Mangat, Hui Peng Koh, Craig Higgins, Jeffrey Schefske, Mandeep Singh

Proceedings Volume 8322, 83221M (2012) https://doi.org/10.1117/12.916171

KEYWORDS: Optical proximity correction, Extreme ultraviolet, Photomasks, Deep ultraviolet, Semiconducting wafers, Extreme ultraviolet lithography, Lithography, Critical dimension metrology, Printing, Monte Carlo methods

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Proceedings Article | 13 March 2012 Paper

Paper

Source mask optimization methodology (SMO) and application to real full chip optical proximity correction

DongQing Zhang, GekSoon Chua, YeeMei Foong, Yi Zou, Stephen Hsu, Stanislas Baron, Mu Feng, Hua-Yu Liu, Zhipan Li, Jessy Schramm, T. Yun, Carl Babcock, Byoung IL Choi, Stefan Roling, Alessandra Navarra, Tanja Fischer, Andre Leschok, Xiaofeng Liu, Weijie Shi, Jianhong Qiu, Russell Dover

Proceedings Volume 8326, 83261V (2012) https://doi.org/10.1117/12.916614

KEYWORDS: Source mask optimization, Optical proximity correction, Semiconducting wafers, Lithography, Electroluminescence, Scanning electron microscopy, Finite element methods, Etching, Critical dimension metrology, Image processing

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Proceedings Article | 14 October 2011 Paper

Paper

Optimization of mask shot count using MB-MDP and lithography simulation

Gek Soon Chua, Wei Long Wang, Byoung IL Choi, Yi Zou, Cyrus Tabery, Ingo Bork, Tam Nguyen, Aki Fujimura

Proceedings Volume 8166, 816632 (2011) https://doi.org/10.1117/12.897037

KEYWORDS: Photomasks, Optical proximity correction, Lithography, Photovoltaics, Data modeling, Semiconducting wafers, SRAF, Source mask optimization, Vestigial sideband modulation, Model-based design

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Proceedings Article | 6 April 2011 Paper

Paper

EUV OPC for 56nm metal pitch

Martin Burkhardt, Matt Colburn, Yunfei Deng, Emily Gallagher, Hirokazu Kato, Greg McIntyre, Karen Petrillo, Sudhar Raghunathan, Adam Smith, Tom Wallow, Obert Wood, Yi Zou, Christian Zuniga

Proceedings Volume 7969, 79690U (2011) https://doi.org/10.1117/12.879931

KEYWORDS: Photomasks, Optical proximity correction, Calibration, Back end of line, Extreme ultraviolet, Extreme ultraviolet lithography, Scanning electron microscopy, Printing, Photoresist processing, Distortion

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Proceedings Article | 11 March 2010 Paper

Paper

Considerations in source-mask optimization for logic applications

Yunfei Deng, Yi Zou, Kenji Yoshimoto, Yuansheng Ma, Cyrus Tabery, Jongwook Kye, Luigi Capodieci, Harry Levinson

Proceedings Volume 7640, 76401J (2010) https://doi.org/10.1117/12.848865

KEYWORDS: Source mask optimization, Lithography, Photomasks, Printing, Optimization (mathematics), Logic, Photoresist processing, Process modeling, 3D modeling, Optical lithography

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Proceedings Article | 10 March 2010 Paper

Paper

Optimization on illumination source with design of experiments

Helen Hu, Yi Zou, Yunfei Deng

Proceedings Volume 7640, 764027 (2010) https://doi.org/10.1117/12.848876

KEYWORDS: Fiber optic illuminators, Diffractive optical elements, Remote sensing, Optimization (mathematics), Statistical analysis, Photomasks, Composites, Data modeling, Optical lithography, Manufacturing

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Proceedings Article | 10 March 2010 Paper

Paper

Evaluation of lithographic benefits of using ILT techniques for 22nm-node

Yi Zou, Yunfei Deng, Jongwook Kye, Luigi Capodieci, Cyrus Tabery, Thuc Dam, Anthony Aadamov, Ki-Ho Baik, Linyong Pang, Bob Gleason

Proceedings Volume 7640, 76400L (2010) https://doi.org/10.1117/12.848479

KEYWORDS: Photomasks, Lithography, Source mask optimization, SRAF, Fiber optic illuminators, Metals, Optical proximity correction, Atrial fibrillation, Logic, Optimization (mathematics)

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Proceedings Article | 16 March 2009 Paper

Paper

A novel methodology for hybrid mask AF generation for 22 and 15nm technology

Yi Zou, Luigi Capodieci, Cyrus Tabery

Proceedings Volume 7274, 72741B (2009) https://doi.org/10.1117/12.814336

KEYWORDS: Atrial fibrillation, Photomasks, Lithography, Model-based design, Manufacturing, Lithium, Optical proximity correction, Resolution enhancement technologies, SRAF, Critical dimension metrology

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Mask AF (AF), both printable (PRAF) and non-printable - or sub-resolution - AF (SRAF) have been part of the established lithography and RET/OPC toolkit for achieving a manufacturable process window, for several technology generations. Deployment of AF onto a mask for a full product or test-chip layout has been traditionally rule-driven, i.e. based on look-up tables of critical feature sizes and corresponding AF, with specified dimensions and at specified distances. The number of AF per given layout main feature, the set of AF dimensions (widths, heights, etc.) and the distances (placements) from the main features are collectively referred to as the AF Rules Set. The identification of the optimal parameters values in an AF Rules Set (or the optimal AF Rules, for short) is a fundamental problem in process technology development for semiconductor manufacturing, which is typically being addressed by a mixture of heuristic parametric searches and lithographic simulations. This approach produces a limited number of usable AF rules (mainly for 1D layout configurations) and often results in insufficient coverage for 2D cases. This paper introduces a novel methodology for the determination of an optimal AF Rules set, which results in a greatly superior coverage of layout configurations (both 1D and 2D) and quantitatively verifiable larger common process window. The methodology utilizes an inverse lithography simulation step, followed by computational geometry analysis and filtering and finally automated rules extraction. The computational flow, which has been implemented for 22nm process development, delivers an order of magnitude more rules (i.e. from few tens to several hundred), and often generates non-intuitive 2D rules which could not have been discovered by heuristic search alone. The presented results illustrate the superior performance of this technique particularly in the case of contact and metal layers at 22nm. Potential extendibility of this approach for the 15nm node is also discussed.

Proceedings Article | 16 March 2009 Paper

Paper

Inverse vs. traditional OPC for the 22nm node

James Word, Yuri Granik, Marina Medvedeva, Sergei Rodin, Luigi Capodieci, Yunfei Deng, Jongwook Kye, Cyrus Tabery, Kenji Yoshimoto, Yi Zou, Hesham Diab, Mohamed Gheith, Mohamed Habib, Cynthia Zhu

Proceedings Volume 7274, 72743A (2009) https://doi.org/10.1117/12.814339

KEYWORDS: Optical proximity correction, Photomasks, Metals, Double patterning technology, Resolution enhancement technologies, Lithography, Manufacturing, Logic, Shape analysis, Visualization

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Proceedings Article | 16 March 2009 Paper

Paper

Overcoming the challenges of 22-nm node patterning through litho-design co-optimization

Martin Burkhardt, J. C. Arnold, Z. Baum, S. Burns, J. Chang, J. Chen, J. Cho, V. Dai, Y. Deng, S. Halle, G. Han, S. Holmes, D. Horak, S. Kanakasabapathy, R. H. Kim, A. Klatchko, C. S. Koay, A. Krasnoperova, Y. Ma, E. McLellan, K. Petrillo, S. Schmitz, C. Tabery, Y. Yin, L. Zhuang, Y. Zou, J. Kye, V. Paruchuri, S. Mansfield, C. Spence, M. Colburn

Proceedings Volume 7274, 727404 (2009) https://doi.org/10.1117/12.814433

KEYWORDS: Etching, Lithography, Printing, Optical lithography, Double patterning technology, Resolution enhancement technologies, Logic, Metals, Photomasks, Tolerancing

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Proceedings Article | 17 October 2008 Paper

Paper

Double dipole RET investigation for 32 nm metal layers

Carl Babcock, Yi Zou, Derren Dunn, Zachary Baum, Zengqin Zhao, Itty Matthew, Pat LaCour

Proceedings Volume 7122, 71220R (2008) https://doi.org/10.1117/12.801789

KEYWORDS: SRAF, Optical proximity correction, Resolution enhancement technologies, Photomasks, Critical dimension metrology, Metals, Fiber optic illuminators, Printing, Algorithm development, Detection and tracking algorithms

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Proceedings Article | 1 April 2008 Paper

Paper

32 nm logic patterning options with immersion lithography

K. Lai, S. Burns, S. Halle, L. Zhuang, M. Colburn, S. Allen, C. Babcock, Z. Baum, M. Burkhardt, V. Dai, D. Dunn, E. Geiss, H. Haffner, G. Han, P. Lawson, S. Mansfield, J. Meiring, B. Morgenfeld, C. Tabery, Y. Zou, C. Sarma, L. Tsou, W. Yan, H. Zhuang, D. Gil, D. Medeiros

Proceedings Volume 6924, 69243C (2008) https://doi.org/10.1117/12.784107

KEYWORDS: Photomasks, Double patterning technology, Logic, Lithography, Etching, Optical lithography, Optical proximity correction, Immersion lithography, Printing, Image processing

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The semiconductor industry faces a lithographic scaling limit as the industry completes the transition to 1.35 NA immersion lithography. Both high-index immersion lithography and EUV lithography are facing technical challenges and commercial timing issues. Consequently, the industry has focused on enabling double patterning technology (DPT) as a means to circumvent the limitations of Rayleigh scaling. Here, the IBM development alliance demonstrate a series of double patterning solutions that enable scaling of logic constructs by decoupling the pattern spatially through mask design or temporally through innovative processes. These techniques have been successfully employed for early 32nm node development using 45nm generation tooling. Four different double patterning techniques were implemented. The first process illustrates local RET optimization through the use of a split reticle design. In this approach, a layout is decomposed into a series of regions with similar imaging properties and the illumination conditions for each are independently optimized. These regions are then printed separately into the same resist film in a multiple exposure process. The result is a singly developed pattern that could not be printed with a single illumination-mask combination. The second approach addresses 2D imaging with particular focus on both line-end dimension and linewidth control [1]. A double exposure-double etch (DE2) approach is used in conjunction with a pitch-filling sacrificial feature strategy. The third double exposure process, optimized for via patterns also utilizes DE2. In this method, a design is split between two separate masks such that the minimum pitch between any two vias is larger than the minimum metal pitch. This allows for final structures with vias at pitches beyond the capability of a single exposure. In the fourth method,, dark field double dipole lithography (DDL) has been successfully applied to BEOL metal structures and has been shown to be overlay tolerant [6]. Collectively, the double patterning solutions developed for early learning activities at 32nm can be extended to 22nm applications.

Proceedings Article | 27 March 2007 Paper

Paper

Methods and factors to optimize OPC run-time

A. Dave, C. Babcock, S. McGowan, Y. Zou

Proceedings Volume 6520, 65203Z (2007) https://doi.org/10.1117/12.714182

KEYWORDS: Optical proximity correction, Data modeling, Calibration, Computer simulations, Statistical analysis, Process modeling, Photomasks, Mathematical modeling, Optimization (mathematics), Image processing

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With the increasing complexity of design and the shrinking of technology nodes, optical proximity correction has become an integral part of IC fabrication. Pattern fidelity is the baseline for any accurate OPC model. Calibrated process models are used to make iterative pattern adjustments over a fragmented design to align simulated images and the target layout. More and more advanced modeling techniques are deployed for accurate prediction of complicated 1D and 2D structures. As such, more aggressive layout situations must be taken into consideration for different process and OPC aspects such as optimization of process window, contrast, MEEF, OPC convergence, and many more. However along with different process optimizations, the mask complexity increases and the OPC run-time is also adversely affected. Often, it has been noticed that the OPC model accuracy is restricted by long OPC run-times. The variation in OPC runtime could be due to many factors, including number of finitely sized segments, multiple iterations of edge movements & simulations, convergence, multiple process conditions, step size, sitelength, model complexity, etc. Integration of fast and accurate analysis is needed to address the growing complexity of OPC solutions. We present here different approaches for OPC run-time improvement. A methodology is prepared to investigate accurate OPC models with fast runtimes. Additionally, proper selection of fragmentation, simulation sitelength, and number of iterations can be modified to achieve significant improvement in computation speed. The variation in run-time is assessed for different approaches listed above with an emphasis on OPC accuracy. Statistical analysis is used to measure image parameters and edge placement errors (EPE) for various experiments and the output is the measurement and plotting of accuracy versus run-time. This paper will present those results and suggest best practices for OPC run-time improvement that can be incorporated as a part of an OPC model building and OPC qualification flow.

Proceedings Article | 21 March 2007 Paper

Paper

Statistical analysis of gate CD variation for yield optimization

Juliet Holwill, Jongwook Kye, Yi Zou

Proceedings Volume 6521, 65211P (2007) https://doi.org/10.1117/12.712178

KEYWORDS: Critical dimension metrology, Transistors, Statistical analysis, Cadmium, Optical proximity correction, Data modeling, MATLAB, Stochastic processes, Visualization, Optimization (mathematics)

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Showing 5 of 22 publications

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