Dr. Charlotte A. Cutler Profile

Dr. Charlotte A. Cutler

Principle Process Engineer

SPIE Involvement:

Author

Publications (12)

SPIE Journal Paper | 22 November 2024

Sub-20-nm tip-to-tip enabled by anti-spacer patterning

Jodi Grzeskowiak, Michael Murphy, David Power, Steven Grzeskowiak, Jacob Dobson, Andrew Weloth, Charlotte Cutler, Eric Liu, David Conklin, Anton Devilliers

JM3, Vol. 24, Issue 01, 011004, (November 2024) https://doi.org/10.1117/12.10.1117/1.JMM.24.1.011004

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Proceedings Article | 10 April 2024 Presentation

Breaching high-NA EUV dimensions with 193i anti-spacer multipatterning

Michael Murphy, Jacob Dobson, Jodi Grzeskowiak, David Power, Charlotte Cutler, Andrew Weloth, David Conklin

Proceedings Volume 12957, 1295711 (2024) https://doi.org/10.1117/12.3010447

KEYWORDS: Extreme ultraviolet, Printing, Lithography, Optical lithography, Integrated circuits, Film thickness, Extreme ultraviolet lithography, Etching, Double patterning technology, Chemistry

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SPIE Journal Paper | 28 January 2021 Open Access

Pattern roughness analysis using power spectral density: application and impact in photoresist formulation

Charlotte Cutler, James Thackeray, Peter Trefonas, Dan Millward, Choong Bong Lee, Chris Mack

JM3, Vol. 20, Issue 01, 010901, (January 2021) https://doi.org/10.1117/12.10.1117/1.JMM.20.1.010901

KEYWORDS: Line width roughness, Nanoimprint lithography, Diffusion, Etching, Diffractive optical elements, Photoresist processing, Image analysis, Image processing, Semiconducting wafers, Photoresist materials

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Proceedings Article | 24 March 2020 Presentation

Line width roughness reduction strategies utilizing power spectral density analysis (Conference Presentation)

Charlotte Cutler, Dan Millward, Choong-Bong Lee, James Thackeray, John Nelson, Jason DeSisto, Rochelle Rena, Chris Mack

Proceedings Volume 11326, 113260H (2020) https://doi.org/10.1117/12.2551694

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Proceedings Article | 25 March 2019 Presentation + Paper

Roughness power spectral density as a function of aerial image and basic process/resist parameter

Charlotte Cutler, Choong Bong Lee, James Thackeray, John Nelson, Jason DeSisto, Rochelle Rena, Peter Trefonas, Chris Mack

Proceedings Volume 10960, 109600I (2019) https://doi.org/10.1117/12.2515073

KEYWORDS: Line width roughness, Nanoimprint lithography, Diffusion, Diffractive optical elements, Image processing, Photoresist processing, Temperature metrology, Image analysis, Image resolution, Lithography

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Proceedings Article | 23 March 2018 Presentation + Paper

Roughness power spectral density as a function of resist parameters and its impact through process

Charlotte Cutler, James Thackeray, Jason DeSisto, John Nelson, Choong-Bong Lee, Mingqi Li, Emad Aqad, Xisen Hou, Tomas Marangoni, Joshua Kaitz, Rochelle Rena, Chris Mack

Proceedings Volume 10587, 1058707 (2018) https://doi.org/10.1117/12.2297690

KEYWORDS: Line width roughness, Scanning electron microscopy

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Proceedings Article | 13 March 2018 Paper

The development of an SC1 removable si-anti-reflective-coating

Shintaro Yamada, Iou-Sheng Ke, Charlotte Cutler, Li Cui, Paul LaBeaume, Daniel Greene, Bhooshan Popere, Chris Sullivan, JoAnne Leonard, Suzanne Coley, Sabrina Wong, Owendi Ongayi, Jim Cameron, Michael Clark, Thomas Fitzgibbons

Proceedings Volume 10586, 105860L (2018) https://doi.org/10.1117/12.2297687

KEYWORDS: Etching, Dry etching, Lithography, Polymers, Reflectivity, Ion implantation

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Proceedings Article | 25 March 2016 Paper

Chemical trimming overcoat: an enhancing composition and process for 193nm lithography

Cong Liu, Kevin Rowell, Lori Joesten, Paul Baranowski, Irvinder Kaur, Wanyi Huang, JoAnne Leonard, Hae-Mi Jeong, Kwang-Hwyi Im, Tom Estelle, Charlotte Cutler, Gerd Pohlers, Wenyan Yin, Patricia Fallon, Mingqi Li, Hyun Jeon, Cheng Bai Xu, Pete Trefonas

Proceedings Volume 9779, 97791Y (2016) https://doi.org/10.1117/12.2219688

KEYWORDS: 193nm lithography, Lithography, Optical lithography, Double patterning technology, Line width roughness, Critical dimension metrology, Printing, Materials processing, Photoresist materials, Photoresist developing, Semiconducting wafers, Cadmium, Scanning electron microscopy

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Proceedings Article | 20 March 2015 Paper

Development of spin-on metal hardmask (SOMHM) for advanced node

Shintaro Yamada, Deyan Wang, Vivian Chuang, Cong Liu, Sabrina Wong, Michael Clark, Charlotte Cutler, William Williams, Paul Baranowski, Mingqi Li, Joe Mattia, JoAnne Leonard, Peter Trefonas, Kathleen O’Connell, Cheng bai Xu

Proceedings Volume 9425, 94251X (2015) https://doi.org/10.1117/12.2086005

KEYWORDS: Metals, Etching, Reflectivity, Dry etching, Photoresist materials, Polymers, Chemical vapor deposition, Oxygen, Photomasks, Silicon

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Proceedings Article | 27 March 2014 Paper

How to design a good photoresist solvent package using solubility parameters and high-throughput research

Michael Tate, Charlotte Cutler, Mike Sakillaris, Michael Kaufman, Thomas Estelle, Carol Mohler, Chris Tucker, Jim Thackeray

Proceedings Volume 9051, 90510R (2014) https://doi.org/10.1117/12.2045974

KEYWORDS: Polymers, Photoresist materials, Hydrogen, Process modeling, Statistical analysis, Semiconductors, Magnesium, Optimization (mathematics), Photoresist developing, Materials processing

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Proceedings Article | 20 May 2004 Paper

Shot noise, LER, and quantum efficiency of EUV photoresists

Robert Brainard, Peter Trefonas, Jeroen Lammers, Charlotte Cutler, Joseph Mackevich, Alexander Trefonas, Stewart Robertson

Proceedings Volume 5374, (2004) https://doi.org/10.1117/12.536411

KEYWORDS: Line edge roughness, Extreme ultraviolet, Molecules, Photons, Deep ultraviolet, Diffusion, Quantum efficiency, Extreme ultraviolet lithography, Optical spheres, Photoresist materials

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The shot noise, line edge roughness (LER) and quantum efficiency of EUV interaction with seven resists related to EUV-2D (SP98248B) are studied. These resists were identical to EUV-2D except were prepared with seven levels of added base while keeping all other resist variables constant. These seven resists were patterned with EUV lithography, and LER was measured on 100-200 nm dense lines. Similarly, the resists were also imaged using DUV lithography and LER was determined for 300-500 nm dense lines. LER results for both wavelengths were plotted against E_size. Both curves show very similar LER behavior-the resists requiring low doses have poor LER, whereas the resists requiring high doses have good LER. One possible explanation for the observed LER response is that the added base improves LER by reacting with the photogenerated acid to control the lateral spread of acid, leading to better chemical contrast at the line edge. An alternative explanation to the observed relationship between LER and E_size is that shot-noise generated LER decreases as the number of photons absorbed at the line edge increases. We present an analytical model for the influence of shot noise based on Poisson statistics that preidicts that the LER is proportional to (E_size)^-1/2. Indeed, both sets of data give straight lines when plotted this way (DUV r² = 0.94; EUV r² = 0.97). We decided to further evaluate this interpretation by constructing a simulation model for shot noise resulting from exposure and acid diffusion at the mask edge. In order to acquire the data for this model, we used the base titration method developed by Szmanda et al. to determine C-parameters and hence the quantum efficiency for producing photogenerated acid. This information, together with film absorptivity, allows the calculation of number and location of acid molecules generated at the mask edgte by assuming a stochastic distribution of individual photons corresponding to the aerial image function. The edge "roughness" of the acid molecule distribution in the film at the mask edge is then simulated as a function of acid diffusion length and compared to the experimental data. In addition, comparisoins between of the number of acid molecules generated and photons consumed leads to values of quantum efficiencies for these EUV resists.

Proceedings Article | 16 June 2003 Paper

Effect of polymer molecular weight on AFM polymer aggregate size and LER of EUV resists

Charlotte Cutler, Joseph Mackevich, Jieming Li, Donna O'Connell, Gregory Cardinale, Robert Brainard

Proceedings Volume 5037, (2003) https://doi.org/10.1117/12.482370

KEYWORDS: Line edge roughness, Polymers, Surface roughness, Extreme ultraviolet, Atomic force microscopy, Deep ultraviolet, Molecular aggregates, Extreme ultraviolet lithography, Scanning electron microscopy, Semiconducting wafers

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Showing 5 of 12 publications

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