Dr. Chris Bencher Profile

Dr. Chris Bencher

at Applied Materials Inc

SPIE Involvement:

Author | Editor

Publications (36)

Proceedings Article | 9 April 2024 Presentation + Paper

Presentation + Paper

Performance comparison of photosensitive polyimides for high-resolution dual-damascene schemes for FOWLP packaging applications

Luisa Bozano, Roger Quon, Ben Briggs, Ryan Ley, Athena Pang, Peng Suo, Prayudi Lianto, Andy Yong, Arvind Sundarrajan, Jorge Fernandez, Niranjan Khasgiwale, C. C. Chuang, Jang Fung Chen, Siddarth Krishnan, Mike Chudzik, Chris Bencher

Proceedings Volume 12957, 129570X (2024) https://doi.org/10.1117/12.3010203

KEYWORDS: Lithography, Packaging, Polyimides, Materials properties, Electrical properties, Dielectrics, Image processing, Film thickness, Chemical mechanical planarization, Advanced packaging

Read Abstract +

SPIE Journal Paper | 4 October 2016 Open Access

Open Access

Special Section Guest Editorial:Alternative Lithographic Technologies V

Chris Bencher, Ricardo Ruiz

JM3, Vol. 15, Issue 03, 031601, (October 2016) https://doi.org/10.1117/12.10.1117/1.JMM.15.3.031601

KEYWORDS: Directed self assembly, Lithography, Electron beam lithography, Extreme ultraviolet lithography, Optical lithography, Extreme ultraviolet, Process control, Integrated circuit design, Nanostructures, Nanoimprint lithography

SPIE Journal Paper | 3 October 2014 Open Access

Open Access

Special Section Guest Editorial: Alternative Lithographic Technologies

Douglas Resnick, Christopher Bencher, Ricardo Ruiz

JM3, Vol. 13, Issue 03, 031301, (October 2014) https://doi.org/10.1117/12.10.1117/1.JMM.13.3.031301

KEYWORDS: Lithography, Optical lithography, Electron beam lithography, Nanotechnology, Extreme ultraviolet lithography, Photomasks, Integrated circuit design, Double patterning technology, Nanolithography, Directed self assembly

Read Abstract +

Proceedings Article | 2 April 2014 Paper

Paper

Tracking defectivity of EUV and SADP processing using bright-field inspection

Nadine Alexis, Chris Bencher, Yongmei Chen, Huixiong Dai, Kfir Dotan, Dale Huang, Alison Nalven, Chris Ngai, Gaetano Santoro, Bharath Vijayaraghavan, Peng Xie, Jun Xue

Proceedings Volume 9050, 905030 (2014) https://doi.org/10.1117/12.2048356

KEYWORDS: Inspection, Polarization, Extreme ultraviolet, Semiconducting wafers, Extreme ultraviolet lithography, Lithography, Photomasks, Signal to noise ratio, Wafer inspection, Metrology

Read Abstract +

Proceedings Article | 27 March 2014 Paper

Paper

Novel and cost-effective multiple patterning technology by means of invisible SiOxNy hardmask

Linus Jang, Young Joon Moon, Ryoung-Han Kim, Christopher Bencher, Huixiong Dai, Peng Xie, Daniel Diehl, Yong Cao, Wilson Zeng, Christopher Ngai

Proceedings Volume 9051, 90510Y (2014) https://doi.org/10.1117/12.2046107

KEYWORDS: Photoresist materials, Optical lithography, Etching, Lithography, Semiconducting wafers, Silicon, System on a chip, Double patterning technology, Manufacturing, Reflectivity

Read Abstract +

Proceedings Article | 29 March 2013 Paper

Paper

Understanding device impact of line edge/width roughness in frequency domain

Peng Xie, He Ren, Aneesh Nainani, Huixiong Dai, Chris Bencher, Chris Ngai

Proceedings Volume 8684, 86840J (2013) https://doi.org/10.1117/12.2013495

KEYWORDS: Line edge roughness, Line width roughness, Dielectric breakdown, Dielectrics, Spatial frequencies, Reliability, Lithography, TCAD, Neodymium

Read Abstract +

Proceedings Article | 29 March 2013 Paper

Paper

Post-litho line edge/width roughness smoothing by ion implantations

Tristan Ma, Peng Xie, Ludovic Godet, Patrick Martin, Chris Campbell, Jun Xue, Liyan Miao, Yongmei Chen, Huixiong Dai, Christopher Bencher, Chris Ngai

Proceedings Volume 8682, 868206 (2013) https://doi.org/10.1117/12.2013435

KEYWORDS: Ion implantation, Plasma, Semiconducting wafers, Line edge roughness, Etching, Ions, Line width roughness, Photoresist materials, Extreme ultraviolet, Plasma etching

Read Abstract +

Proceedings Article | 16 April 2012 Paper

Paper

Directed self-assembly defectivity assessment. Part II

Chris Bencher, He Yi, Jessica Zhou, Manping Cai, Jeffrey Smith, Liyan Miao, Ofir Montal, Shiran Blitshtein, Alon Lavi, Kfir Dotan, Huixiong Dai, Joy Cheng, Daniel Sanders, Melia Tjio, Steven Holmes

Proceedings Volume 8323, 83230N (2012) https://doi.org/10.1117/12.917993

KEYWORDS: Polymethylmethacrylate, Metrology, Image registration, Scanning electron microscopy, Inspection, Semiconducting wafers, Signal to noise ratio, Polymers, Optical lithography, Directed self assembly

Read Abstract +

Proceedings Article | 5 April 2012 Paper

Paper

Small particle defect characterization on critical layers of 22nm Spacer Self-Aligned Double Patterning (SADP)

Gurminder Singh, Kfir Dotan, Saar Shabtay, Man-Ping Cai, Noam Shachar, Chris Ngai, Chris Bencher, Liyan Miao, Yongmei Chen

Proceedings Volume 8324, 83241X (2012) https://doi.org/10.1117/12.918266

KEYWORDS: Particles, Lithography, Etching, Inspection, Defect detection, Double patterning technology, Defect inspection, Bridges, Wafer inspection, Semiconducting wafers

Read Abstract +

Proceedings Article | 6 March 2012 Open Access

Open Access

Paper

Block copolymer directed self-assembly enables sublithographic patterning for device fabrication

H.-S. Philip Wong, Chris Bencher, He Yi, Xin-Yu Bao, Li-Wen Chang

Proceedings Volume 8323, 832303 (2012) https://doi.org/10.1117/12.918312

KEYWORDS: Optical lithography, Lithography, Semiconductors, Scanning electron microscopy, Baryon acoustic oscillations, Semiconductor manufacturing, Logic, Double patterning technology, Photomasks, Directed self assembly

Read Abstract +

SPIE Journal Paper | 1 October 2011

Toward 22 nm: fast and effective intrafield monitoring and optimization of process windows and critical dimension uniformity

Christopher Bencher, Jo Finders, Ilan Englard, Yaron Cohen, Amir Sagiv, Michael Ben-Yishai, Shmoolik Mangan, Huixiong Dai, Chris Ngai, Kfir Dotan, Roel Knops, Orion Mouraille, Evert Mos, Alexander Kremer

JM3, Vol. 10, Issue 04, 043003, (October 2011) https://doi.org/10.1117/12.10.1117/1.3641409

KEYWORDS: Photomasks, Semiconducting wafers, Critical dimension metrology, Lithography, Metrology, Inspection, Scanners, Optimization (mathematics), Double patterning technology, Wavefronts

Read Abstract +

Proceedings Article | 20 April 2011 Paper

Paper

Characterization of EUV resists for defectivity at 32nm

Ofir Montal, Ido Dolev, Moshe Rosenzweig, Kfir Dotan, Doron Meshulach, Ofer Adan, Shimon Levi, Man-Ping Cai, Chris Bencher, Chris Ngai, Christiane Jehoul, Dieter Van Den Heuvel, Eric Hendrickx

Proceedings Volume 7971, 79710G (2011) https://doi.org/10.1117/12.881323

KEYWORDS: Extreme ultraviolet, Semiconducting wafers, Extreme ultraviolet lithography, Bridges, Inspection, Scattering, Polarization, Photoresist processing, Light scattering, Neodymium

Read Abstract +

Proceedings Article | 20 April 2011 Paper

Paper

EUV defect characterization study on post litho and etch for 1x and 2x node processes

Ofir Montal, Man-Ping Cai, Kfir Dotan, Ido Dolev, Tom Wallow, Obert Wood, Uzo Okoroanyanwu, Moshe Rozentsvige, Chris Ngai, Chris Bencher, Amiad Conley

Proceedings Volume 7971, 797126 (2011) https://doi.org/10.1117/12.881518

KEYWORDS: Etching, Extreme ultraviolet, Semiconducting wafers, Lithography, Deep ultraviolet, Scattering, Polarization, Bridges, Inspection, Light scattering

Read Abstract +

Proceedings Article | 20 April 2011 Paper

Paper

Towards 22 nm: fast and effective intra-field monitoring and optimization of process windows and CDU

Yaron Cohen, Jo Finders, Roel Knops, Orion Mouraille, Ingrid Minnaert-Janssen, Frank Duray, Evert Mos, Alexander Kremer, Amir Sagiv, Shmoolik Mangan, Michael Ben Yishay, Huixiong Dai, Christopher Bencher, Christopher Ngai, Kfir Dotan, Ilan Englard

Proceedings Volume 7971, 79711N (2011) https://doi.org/10.1117/12.881657

KEYWORDS: Photomasks, Semiconducting wafers, Metrology, Lithography, Critical dimension metrology, Scanners, Inspection, Double patterning technology, Optimization (mathematics), Wavefronts

Read Abstract +

Proceedings Article | 4 April 2011 Paper

Paper

Double patterning compliant logic design

Yuangsheng Ma, Jason Sweis, Chris Bencher, Yunfei Deng, Huixiong Dai, Hidekazu Yoshida, Bimal Gisuthan, Jongwook Kye, Harry Levinson

Proceedings Volume 7974, 79740D (2011) https://doi.org/10.1117/12.879846

KEYWORDS: Double patterning technology, Semiconducting wafers, Logic, Optical lithography, Etching, Metals, Back end of line, Neodymium, Standards development, Scanning electron microscopy

Read Abstract +

Proceedings Article | 2 April 2011 Paper

Paper

Self-assembly patterning for sub-15nm half-pitch: a transition from lab to fab

Chris Bencher, Jeffrey Smith, Liyan Miao, Cathy Cai, Yongmei Chen, Joy Cheng, Daniel Sanders, Melia Tjio, Hoa Truong, Steven Holmes, William Hinsberg

Proceedings Volume 7970, 79700F (2011) https://doi.org/10.1117/12.881293

KEYWORDS: Semiconducting wafers, Optical lithography, Etching, Polymers, Lithography, Semiconductors, Inspection, Chemical vapor deposition, Silicon, Directed self assembly

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Proceedings Article | 23 March 2011 Paper

Paper

Sidewall spacer quadruple patterning for 15nm half-pitch

Ping Xu, Yongmei Chen, Yijian Chen, Liyan Miao, Shiyu Sun, Sung-Woo Kim, Ami Berger, Daxin Mao, Christ Bencher, Raymond Hung, Chris Ngai

Proceedings Volume 7973, 79731Q (2011) https://doi.org/10.1117/12.881547

KEYWORDS: Etching, Optical lithography, Silicon, Scanning electron microscopy, Line width roughness, Lithography, Double patterning technology, Semiconducting wafers, Oxides, Neodymium

Read Abstract +

Proceedings Article | 23 March 2011 Paper

Paper

Innovative self-aligned triple patterning for 1x half pitch using single "spacer deposition-spacer etch" step

Bencherki Mebarki, Hao D. Chen, Yongmei Chen, Aunchan Wang, Jingmei Liang, Kedar Sapre, Tushar Mandrekar, Xiaolin Chen, Ping Xu, Pokhui Blanko, Christopher Ngai, Chris Bencher, Mehul Naik

Proceedings Volume 7973, 79730G (2011) https://doi.org/10.1117/12.881574

KEYWORDS: Etching, Optical lithography, Photomasks, Oxides, Immersion lithography, Tin, Dry etching, Critical dimension metrology, Back end of line, Dielectrics

Read Abstract +

Proceedings Article | 23 March 2011 Paper

Paper

Self-aligned triple patterning for continuous IC scaling to half-pitch 15nm

Yijian Chen, Ping Xu, Liyan Miao, Yongmei Chen, Xumou Xu, Daxin Mao, Pokhui Blanco, Chris Bencher, Raymond Hung, Chris Ngai

Proceedings Volume 7973, 79731P (2011) https://doi.org/10.1117/12.881645

KEYWORDS: Photomasks, Optical lithography, Oxides, Etching, Lithography, Silicon, Immersion lithography, Electron beam lithography, Line width roughness, Line edge roughness

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Proceedings Article | 23 March 2011 Paper

Paper

Mandrel-based patterning: density multiplication techniques for 15nm nodes

Chris Bencher, Huixiong Dai, Liyan Miao, Yongmei Chen, Ping Xu, Yijian Chen, Shiany Oemardani, Jason Sweis, Vincent Wiaux, Jan Hermans, Li-Wen Chang, Xinyu Bao, He Yi, H.-S. Philip Wong

Proceedings Volume 7973, 79730K (2011) https://doi.org/10.1117/12.881679

KEYWORDS: Optical lithography, Photomasks, Line width roughness, Lithography, Semiconducting wafers, Back end of line, Double patterning technology, Logic, Extreme ultraviolet, Directed self assembly

Read Abstract +

SPIE Journal Paper | 1 October 2010

Scatterometry characterization of spacer double patterning structures

Prasad Dasari, Jiangtao Hu, Zhuan Liu, Asher Tan, Oleg Kritsun, Catherine Volkman, Christopher Bencher

JM3, Vol. 9, Issue 04, 041309, (October 2010) https://doi.org/10.1117/12.10.1117/1.3531999

KEYWORDS: Scatterometry, Critical dimension metrology, Double patterning technology, Semiconducting wafers, Etching, Reflectance spectroscopy, Metrology, Spectroscopy, Reflectometry, Lithography

Read Abstract +

Proceedings Article | 3 April 2010 Paper

Paper

Decomposition strategies for self-aligned double patterning

Yuansheng Ma, Jason Sweis, Chris Bencher, Huixiong Dai, Yongmei Chen, Jason Cain, Yunfei Deng, Jongwook Kye, Harry Levinson

Proceedings Volume 7641, 76410T (2010) https://doi.org/10.1117/12.848387

KEYWORDS: Photomasks, Optical lithography, Etching, Dielectrics, Double patterning technology, Image processing, Logic, Scanning electron microscopy, Back end of line, Metals

Read Abstract +

Proceedings Article | 2 April 2010 Paper

Paper

Scatterometry characterization of spacer double patterning structures

Prasad Dasari, Jiangtao Hu, Zhuan Liu, Asher Tan, Oleg Kritsun, Catherine Volkman, Chris Bencher

Proceedings Volume 7638, 76381J (2010) https://doi.org/10.1117/12.848518

KEYWORDS: Scatterometry, Critical dimension metrology, Double patterning technology, Semiconducting wafers, Etching, Metrology, Overlay metrology, Scatter measurement, Spectroscopy, Ellipsometry

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Proceedings Article | 4 March 2010 Paper

Paper

Self-aligned double patterning process for 32/32nm contact/space and beyond using 193 immersion lithography

Bencherki Mebarki, Liyan Miao, Yongmei Chen, James Yu, Pokhui Blanco, James Makeeff, Jen Shu, Christopher Bencher, Mehul Naik, Christopher Sui Wing Ngai

Proceedings Volume 7640, 764023 (2010) https://doi.org/10.1117/12.862583

KEYWORDS: Double patterning technology, Photomasks, Etching, Optical lithography, Immersion lithography, Silicon, Extreme ultraviolet lithography, 193nm lithography, Lithography, Oxides

Read Abstract +

Proceedings Article | 16 March 2009 Paper

Paper

Alignment and overlay improvements for 3x nm and beyond process with CVD sidewall spacer double patterning

Huixiong Dai, Chris Bencher, Yongmei Chen, Shiyu Sun, Xumou Xu, Chris Ngai

Proceedings Volume 7274, 72743G (2009) https://doi.org/10.1117/12.814376

KEYWORDS: Optical alignment, Semiconducting wafers, Photomasks, Double patterning technology, Optical lithography, Scanners, Etching, Chemical vapor deposition, Manufacturing, Lithography

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Proceedings Article | 16 March 2009 Paper

Paper

Demonstration of 32nm half-pitch electrical testable NAND FLASH patterns using self-aligned double patterning

Shiyu Sun, Chris Bencher, Yongmei Chen, Huixiong Dai, Man-Ping Cai, Jaklyn Jin, Pokhui Blanco, Liyan Miao, Ping Xu, Xumou Xu, James Yu, Raymond Hung, Shiany Oemardani, Osbert Chan, Chorng-Ping Chang, Chris Ngai

Proceedings Volume 7274, 72740D (2009) https://doi.org/10.1117/12.814403

KEYWORDS: Lithography, Resistance, Etching, Double patterning technology, Photomasks, Optical lithography, Scanning electron microscopy, Oxides, Photoresist materials, Line edge roughness

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Proceedings Article | 16 March 2009 Paper

Paper

Gridded design rule scaling: taking the CPU toward the 16nm node

Christopher Bencher, Huixiong Dai, Yongmei Chen

Proceedings Volume 7274, 72740G (2009) https://doi.org/10.1117/12.814435

KEYWORDS: Photomasks, Logic, Double patterning technology, Optical lithography, Etching, Lithography, Metals, Electron beam lithography, Scanners, Optical proximity correction

Read Abstract +

Proceedings Article | 13 March 2009 Paper

Paper

Implementing self-aligned double patterning on non-gridded design layouts

Huixiong Dai, Jason Sweis, Chris Bencher, Yongmei Chen, Jen Shu, Xumou Xu, Chris Ngai, Judy Huckabay, Milind Weling

Proceedings Volume 7275, 72751E (2009) https://doi.org/10.1117/12.814423

KEYWORDS: Photomasks, Double patterning technology, Etching, Scanners, Lithography, Manufacturing, Logic, Optical lithography, Electronic design automation, Optical proximity correction

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Proceedings Article | 1 April 2008 Paper

Paper

Double patterning combined with shrink technique to extend ArF lithography for contact holes to 22nm node and beyond

Xiangqun Miao, Lior Huli, Hao Chen, Xumou Xu, Hyungje Woo, Chris Bencher, Jen Shu, Chris Ngai, Christopher Borst

Proceedings Volume 6924, 69240A (2008) https://doi.org/10.1117/12.772024

KEYWORDS: Double patterning technology, Etching, Lithography, Amorphous silicon, Scanning electron microscopy, Tin, Photomasks, Semiconducting wafers, Resolution enhancement technologies, Extreme ultraviolet

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Proceedings Article | 7 March 2008 Paper

Paper

22nm half-pitch patterning by CVD spacer self alignment double patterning (SADP)

Chris Bencher, Yongmei Chen, Huixiong Dai, Warren Montgomery, Lior Huli

Proceedings Volume 6924, 69244E (2008) https://doi.org/10.1117/12.772953

KEYWORDS: Photomasks, Double patterning technology, Etching, Optical lithography, Line edge roughness, Lithography, Chemical vapor deposition, Semiconducting wafers, Manufacturing, Silicon

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Proceedings Article | 7 March 2008 Paper

Paper

45nm and 32nm half-pitch patterning with 193nm dry lithography and double patterning

Huixiong Dai, Chris Bencher, Yongmei Chen, Hyungje Woo, Chris Ngai, Xumou Xu

Proceedings Volume 6924, 692421 (2008) https://doi.org/10.1117/12.772260

KEYWORDS: Etching, Double patterning technology, Metals, Photomasks, Optical lithography, Lithography, Line width roughness, Overlay metrology, Line edge roughness, Chemical vapor deposition

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Proceedings Article | 4 March 2008 Paper

Paper

APF pitch-halving for 22nm logic cells using gridded design rules

Michael Smayling, Christopher Bencher, Hao Chen, Huixiong Dai, Michael Duane

Proceedings Volume 6925, 69251E (2008) https://doi.org/10.1117/12.772905

KEYWORDS: Logic, Photomasks, Optical lithography, Etching, Transistors, Double patterning technology, Chemical vapor deposition, Semiconducting wafers, Dielectrics, Image processing

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Proceedings Article | 27 March 2007 Paper

Paper

RET application in 45-nm node and 32-nm node contact hole dry ArF lithography process development

Xiangqun Miao, Xumou Xu, Yongmei Chen, Chris Ordonio, Chris Bencher, Chris Ngai

Proceedings Volume 6520, 65201F (2007) https://doi.org/10.1117/12.707782

KEYWORDS: Optical proximity correction, Photomasks, Lithography, Etching, Resolution enhancement technologies, Double patterning technology, Scanning electron microscopy, Semiconducting wafers, Neodymium, Data modeling

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Proceedings Article | 26 June 2003 Paper

Paper

Generating sub-30-nm polysilicon gates using PECVD amorphous carbon as hardmask and anti-reflective coating

Wei Liu, David Mui, Thorston Lill, May Wang, Christopher Bencher, Michael Kwan, Wendy Yeh, Takeaki Ebihara, Toshihiro Oga

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485532

KEYWORDS: Etching, Carbon, Photoresist materials, Lithography, Photomasks, 193nm lithography, Critical dimension metrology, Reflectivity, Antireflective coatings, Optical lithography

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Proceedings Article | 27 August 1998 Paper

Paper

Plasma damage monitoring for PECVD deposition: a contact potential difference study and device yield analysis

Zhiwei Xu, Christopher Bencher, Maggie Le, Chris Ngai

Proceedings Volume 3509, (1998) https://doi.org/10.1117/12.324402

KEYWORDS: Plasma, Oxides, Polysomnography, Semiconducting wafers, Plasma enhanced chemical vapor deposition, Deposition processes, Antennas, Manufacturing, Yield improvement, Silicon

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Proceedings Article | 14 August 1997 Paper

Paper

Enhanced poly gate critical dimension control by using a SiOxNy ARC film

Christopher Bencher, Tony Chu, Way Tat Tan, Gang Zou, Qunying Lin, Xu Yi, Wang Xu Dong, Ma Wei Wen

Proceedings Volume 3183, (1997) https://doi.org/10.1117/12.280548

KEYWORDS: Optical lithography, Refractive index, Silicon, Silicon films, Plasma enhanced chemical vapor deposition, Critical dimension metrology, Optical properties, Antireflective coatings, Dielectrics, Deposition processes

Read Abstract +

Showing 5 of 36 publications

Proceedings Volume Editor (4)

SPIE Conference Volume | 4 May 2017

Emerging Patterning Technologies

SPIE Conference Volume | 5 July 2016

Alternative Lithographic Technologies VIII

SPIE Conference Volume | 21 April 2015

Alternative Lithographic Technologies VII

SPIE Conference Volume | 30 April 2014

Alternative Lithographic Technologies VI

Conference Committee Involvement (6)

Novel Patterning Technologies 2018

26 February 2018 | San Jose, California, United States

Emerging Patterning Technologies 2017

27 February 2017 | San Jose, California, United States

Alternative Lithographic Technologies VIII

22 February 2016 | San Jose, California, United States

Alternative Lithographic Technologies VII

23 February 2015 | San Jose, California, United States

Alternative Lithographic Technologies VI

24 February 2014 | San Jose, California, United States

Showing 5 of 6 Conference Committees

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