Dr. Mireille Maenhoudt Profile

Dr. Mireille Maenhoudt

Executive VP Research and Development at Heraeus Electro-Nite International NV

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Author

Publications (32)

Proceedings Article | 10 March 2010 Paper

Printing the metal and contact layers for the 32- and 22-nm node: comparing positive and negative tone development process

L. Van Look, J. Bekaert, V. Truffert, V. Wiaux, F. Lazzarino, M. Maenhoudt, G. Vandenberghe, Mario Reybrouck, Shinji Tarutani

Proceedings Volume 7640, 764011 (2010) https://doi.org/10.1117/12.848228

KEYWORDS: Printing, Photomasks, Scanning electron microscopy, Optical lithography, Etching, Semiconducting wafers, Lithography, Double patterning technology, Metals, Electroluminescence

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Proceedings Article | 4 March 2010 Paper

LENS (lithography enhancement toward nano scale): a European project to support double exposure and double patterning technology development

Pietro Cantu, Livio Baldi, Paolo Piacentini, Joost Sytsma, Bertrand Le Gratiet, Stéphanie Gaugiran, Patrick Wong, Hiroyuki Miyashita, Luisa Atzei, Xavier Buch, Dick Verkleij, Olivier Toublan, Francesco Perez-Murano, David Mecerreyes

Proceedings Volume 7640, 764022 (2010) https://doi.org/10.1117/12.846030

KEYWORDS: Double patterning technology, Photomasks, Lithography, Metrology, Etching, Optical lithography, Algorithm development, Immersion lithography, Materials processing, Manufacturing

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Proceedings Article | 12 December 2009 Paper

Low temperature plasma-enhanced ALD enables cost-effective spacer defined double patterning (SDDP)

Julien Beynet, Patrick Wong, Andy Miller, Sabrina Locorotondo, Diziana Vangoidsenhoven, Tae-Ho Yoon, Marc Demand, Hyung-Sang Park, Tom Vandeweyer, Hessel Sprey, Yong-Min Yoo, Mireille Maenhoudt

Proceedings Volume 7520, 75201J (2009) https://doi.org/10.1117/12.836979

KEYWORDS: Line width roughness, Etching, Semiconducting wafers, Photoresist materials, Double patterning technology, Atomic layer deposition, Optical lithography, Silica, Plasma enhanced chemical vapor deposition, Silicon

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Proceedings Article | 17 March 2009 Paper

Dense lines created by spacer DPT scheme: process control by local dose adjustment using advanced scanner control

Jo Finders, Mircea Dusa, Bert Vleeming, Timon Fliervoet, Birgitt Hepp, Henry Megens, Remco Groenendijk, John Quaedackers, Evert Mos, Christian Leewis, Frank Bornebroek, Mireille Maenhoudt, Marc Leblans, Tom Vandeweyer, Gayle Murdoch, Efrain Altamirano Sanchez

Proceedings Volume 7274, 72740R (2009) https://doi.org/10.1117/12.814091

KEYWORDS: Semiconducting wafers, Etching, Critical dimension metrology, Metrology, Scatterometry, Scanning electron microscopy, Scanners, Process control, Lithography, Optical lithography

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Proceedings Article | 16 March 2009 Paper

Ultimate contact hole resolution using immersion lithography with line/space imaging

V. Truffert, J. Bekaert, F. Lazzarino, M. Maenhoudt, A. Miller, M. Moelants, T. Wu

Proceedings Volume 7274, 72740N (2009) https://doi.org/10.1117/12.814867

KEYWORDS: Etching, Photomasks, Tin, Oxides, Semiconducting wafers, Optical lithography, Critical dimension metrology, Scanners, Photoresist developing, Electroluminescence

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SPIE Journal Paper | 1 January 2009

Double patterning lithography for 32 nm: critical dimensions uniformity and overlay control considerations

Jo Finders, Mircea Dusa, Bert Vleeming, Birgitt Hepp, Mireille Maenhoudt, Shaunee Cheng, Tom Vandeweyer

JM3, Vol. 8, Issue 01, 011002, (January 2009) https://doi.org/10.1117/12.10.1117/1.3079349

KEYWORDS: Double patterning technology, Critical dimension metrology, Etching, Lithography, Photomasks, Reticles, Semiconducting wafers, Overlay metrology, Scanners, Optical lithography

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SPIE Journal Paper | 1 January 2009

30-nm half-pitch metal patterning using Motif^TM critical dimension shrink technique and double patterning

Janko Versluijs, Jean-Francois de Marneffe, Danny Goossens, Tom Vandeweyer, Vincent Wiaux, Herbert Struyf, Mireille Maenhoudt, Mohand Brouri, Johan Vertommen, Jisoo Kim, Helen Zhu

JM3, Vol. 8, Issue 01, 011007, (January 2009) https://doi.org/10.1117/12.10.1117/1.3066632

KEYWORDS: Etching, Critical dimension metrology, Optical lithography, Optical proximity correction, Metals, Scanning electron microscopy, Semiconducting wafers, Photomasks, Double patterning technology, Tin

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Proceedings Article | 4 December 2008 Paper

A methodology for double patterning compliant split and design

Vincent Wiaux, Staf Verhaegen, Fumio Iwamoto, Mireille Maenhoudt, Takashi Matsuda, Sergei Postnikov, Geert Vandenberghe

Proceedings Volume 7140, 71401X (2008) https://doi.org/10.1117/12.804697

KEYWORDS: Double patterning technology, Optical lithography, Optical proximity correction, Logic, Metals, Photomasks, Etching, Failure analysis, Resolution enhancement technologies, Critical dimension metrology

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Proceedings Article | 17 October 2008 Paper

Printability verification for double-patterning technology

Gerard Luk-Pat, Petrisor Panaite, Kevin Lucas, Christopher Cork, Vincent Wiaux, Staf Verhaegen, Mireille Maenhoudt

Proceedings Volume 7122, 71220Q (2008) https://doi.org/10.1117/12.801545

KEYWORDS: Etching, Lithography, Printing, Double patterning technology, Optical proximity correction, Critical dimension metrology, Resolution enhancement technologies, Scanning electron microscopy, Bridges, Extreme ultraviolet

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Proceedings Article | 1 April 2008 Paper

Alternative process schemes for double patterning that eliminate the intermediate etch step

M. Maenhoudt, R. Gronheid, N. Stepanenko, T. Matsuda, D. Vangoidsenhoven

Proceedings Volume 6924, 69240P (2008) https://doi.org/10.1117/12.771884

KEYWORDS: Etching, Double patterning technology, Optical lithography, Logic, Photoresist processing, Coating, Thin film coatings, Semiconducting wafers, Scanners, Oxides

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Proceedings Article | 1 April 2008 Paper

30nm half-pitch metal patterning using Moti CD shrink technique and double patterning

Janko Versluijs, J.-F. De Marneffe, Danny Goossens, Maaike Op de Beeck, Tom Vandeweyer, Vincent Wiaux, Herbert Struyf, Mireille Maenhoudt, Mohand Brouri, Johan Vertommen, Ji Soo Kim, Helen Zhu, Reza Sadjadi

Proceedings Volume 6924, 69242C (2008) https://doi.org/10.1117/12.774139

KEYWORDS: Etching, Optical proximity correction, Optical lithography, Double patterning technology, Photomasks, Scanning electron microscopy, Semiconducting wafers, Metals, Tin, Dielectrics

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Proceedings Article | 1 April 2008 Paper

Split and design guidelines for double patterning

Vincent Wiaux, Staf Verhaegen, Shaunee Cheng, Fumio Iwamoto, Patrick Jaenen, Mireille Maenhoudt, Takashi Matsuda, Sergei Postnikov, Geert Vandenberghe

Proceedings Volume 6924, 692409 (2008) https://doi.org/10.1117/12.774104

KEYWORDS: Double patterning technology, Optical lithography, Logic, Optical proximity correction, Photomasks, Metals, Etching, Failure analysis, Immersion lithography, Image resolution

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Proceedings Article | 18 March 2008 Paper

Double patterning for 32nm and below: an update

Jo Finders, Mircea Dusa, Bert Vleeming, Henry Megens, Birgitt Hepp, Mireille Maenhoudt, Shaunee Cheng, Tom Vandeweyer

Proceedings Volume 6924, 692408 (2008) https://doi.org/10.1117/12.772780

KEYWORDS: Etching, Critical dimension metrology, Reticles, Double patterning technology, Semiconducting wafers, Overlay metrology, Optical lithography, Lithography, Scanners, Metrology

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Proceedings Article | 12 March 2008 Paper

Checking design conformance and optimizing manufacturability using automated double patterning decomposition

Chris Cork, Brian Ward, Levi Barnes, Ben Painter, Kevin Lucas, Gerry Luk-Pat, Vincent Wiaux, Staf Verhaegen, Mireille Maenhoudt

Proceedings Volume 6925, 69251Q (2008) https://doi.org/10.1117/12.774647

KEYWORDS: Double patterning technology, Manufacturing, Optical lithography, Photomasks, Logic, Optical proximity correction, Ultraviolet radiation, Lithography, Semiconducting wafers, Phase shifts

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Delays in equipment availability for both Extreme UV and High index immersion have led to a growing interest in double patterning as a suitable solution for the 22nm logic node. Double patterning involves decomposing a layout into two masking layers that are printed and etched separately so as to provide the intrinsic manufacturability of a previous lithography node with the pitch reduction of a more aggressive node. Most 2D designs cannot be blindly shrunk to run automatically on a double patterning process and so a set of guidelines for how to layout for this type of flow is needed by designers. While certain classes of layout can be clearly identified and avoided based on short range interactions, compliance issues can also extend over large areas of the design and are hard to recognize. This means certain design practices should be implemented to provide suitable breaks or performed with layout tools that are double patterning compliance aware. The most striking set of compliance errors result in layout on one of the masks that is at the minimum design space rather than the relaxed space intended. Another equally important class of compliance errors is that related to marginal printability, be it poor wafer overlap and/or poor process window (depth of focus, dose latitude, MEEF, overlay). When decomposing a layout the tool is often presented with multiple options for where to cut the design thereby defining an area of overlap between the different printed layers. While these overlap areas can have markedly different topologies (for instance the overlap may occur on a straight edge or at a right angled corner), quantifying the quality of a given overlap ensures that more robust decomposition solutions can be chosen over less robust solutions. Layouts which cannot be decomposed or which can only be decomposed with poor manufacturability need to be highlighted to the designer, ideally with indications on how best to resolve this issue. This paper uses an internally developed automated double pattern decomposition tool to investigate design compliance and describes a number of classes of non-conforming layout. Tool results then provide help to the designer to achieve robust design compliant layout.

Proceedings Article | 27 March 2007 Paper

Pitch doubling through dual-patterning lithography challenges in integration and litho budgets

Mircea Dusa, John Quaedackers, Olaf Larsen, Jeroen Meessen, Eddy van der Heijden, Gerald Dicker, Onno Wismans, Paul de Haas, Koen van Ingen Schenau, Jo Finders, Bert Vleeming, Geert Storms, Patrick Jaenen, Shaunee Cheng, Mireille Maenhoudt

Proceedings Volume 6520, 65200G (2007) https://doi.org/10.1117/12.714278

KEYWORDS: Etching, Semiconducting wafers, Double patterning technology, Optical lithography, Overlay metrology, Critical dimension metrology, Lithography, Neodymium, Photomasks, Manufacturing

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Proceedings Article | 29 March 2006 Paper

Top coat or no top coat for immersion lithography?

N. Stepanenko, Hyun-Woo Kim, S. Kishimura, D. Van Den Heuvel, N. Vandenbroeck, M. Kocsis, P. Foubert, M. Maenhoudt, M. Ercken, F. Van Roey, R. Gronheid, I. Pollentier, D. Vangoidsenhoven, C. Delvaux, C. Baerts, S. O'Brien, W. Fyen, G. Wells

Proceedings Volume 6153, 615304 (2006) https://doi.org/10.1117/12.660158

KEYWORDS: Thin film coatings, Digital watermarking, Particles, Semiconducting wafers, Immersion lithography, Scanners, Water, Critical dimension metrology, Photomasks, Scatterometry

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Since the moment immersion lithography appeared in the roadmaps of IC manufacturers, the question whether to use top coats has become one of the important topics for discussions. The top coats used in immersion lithography have proved to serve as good protectors from leaching of the resist components (PAGs, bases) into the water. However their application complicates the process and may lead to two side effects. First, top coats can affect the process window and resist profile depending on the material's refractive index, thickness, acidity, chemical interaction with the resist and the soaking time. Second, the top coat application may increase the total amount of defects on the wafer. Having an immersion resist which could work without the top coat would be a preferable solution. Still, it is quite challenging to make such a resist as direct water/resist interaction may also result in process window changes, CD variations, generation of additional defects. We have performed a systematic evaluation of a large number of immersion resist and top coat combinations, using the ASML XT:1250Di scanner at IMEC. The samples for the experiments were provided by all the leading resist and top coat suppliers. Particular attention was paid to how the resist and top coat materials from different vendors interacted with each other. Among the factors which could influence the total amount of defects or CD variations on the wafer were: the material's dynamic contact angle and its interaction with the scanner stage speed, top coat thickness and intermixing layer formation, water uptake and leaching. We have examined the importance of all mentioned factors, using such analytical techniques as Resist Development Analyser (RDA), Quartz Crystal Microbalance (QCM), Mass Spectroscopy (MS) and scatterometry. We have also evaluated the influence of the pre- and pos- exposure rinse processes on the defectivity. In this paper we will present the data on imaging and defectivity performance of the resists with and without the use of top coats. So far we can conclude that top coat/resist approach used in immersion lithography needs some more improvements (i.e. process, materials properties) in order to be implemented in high volume manufacturing.

Proceedings Article | 24 March 2006 Paper

The use of unpatterned wafer inspection for immersion lithography defectivity studies

Frank Holsteyns, Lisa Cheung, Dieter Van Den Heuvel, Gino Marcuccilli, Gavin Simpson, Roland Brun, Andy Steinbach, Wim Fyen, Diziana Vangoidsenhoven, Paul Mertens, Mireille Maenhoudt

Proceedings Volume 6152, 61521U (2006) https://doi.org/10.1117/12.656728

KEYWORDS: Inspection, Semiconducting wafers, Scattering, Silicon, Light scattering, Immersion lithography, Signal to noise ratio, Laser scattering, Defect detection, Optical lithography

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Proceedings Article | 20 March 2006 Paper

Immersion specific defect mechanisms: findings and recommendations for their control

Michael Kocsis, Dieter Van Den Heuvel, Roel Gronheid, Mireille Maenhoudt, Dizana Vangoidsenhoven, Greg Wells, Nickolay Stepanenko, Michael Benndorf, Hyun Woo Kim, Shinji Kishimura, Monique Ercken, Frieda Van Roey, S. O'Brien, Wim Fyen, Philippe Foubert, Richard Moerman, Bob Streefkerk

Proceedings Volume 6154, 615409 (2006) https://doi.org/10.1117/12.660432

KEYWORDS: Semiconducting wafers, Thin film coatings, Water, Particles, Scanners, Immersion lithography, Manufacturing, Scanning electron microscopy, Space operations, Distortion

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Proceedings Article | 12 May 2005 Paper

Double patterning scheme for sub-0.25 k1 single damascene structures at NA=0.75, λ=193nm

M. Maenhoudt, J. Versluijs, H. Struyf, J. Van Olmen, M. Van Hove

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.613326

KEYWORDS: Etching, Overlay metrology, Double patterning technology, Semiconducting wafers, Oxides, Resistance, Copper, Critical dimension metrology, 193nm lithography, Nanoimprint lithography

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Proceedings Article | 12 May 2005 Paper

A methodology for the characterization of topography induced immersion bubble defects

Michael Kocsis, Peter De Bisschop, Mireille Maenhoudt, Young-Chang Kim, Greg Wells, Scott Light, Tony DiBiase

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.599329

KEYWORDS: Semiconducting wafers, Reticles, Scanners, Inspection, Defect inspection, Prototyping, Etching, Metrology, Scanning electron microscopy, Immersion lithography

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Proceedings Article | 4 May 2005 Paper

Impact of water and top-coats on lithographic performance in 193-nm immersion lithography

Shinji Kishimura, Roel Gronheid, Monique Ercken, Mireille Maenhoudt, Takahiro Matsuo, Masayuki Endo, Masaru Sasago

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.598532

KEYWORDS: Ions, Immersion lithography, Water, Lithography, Optical lithography, Analytical research, Quartz, Crystals, Semiconducting wafers, Surface roughness

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Proceedings Article | 12 June 2003 Paper

Photoresist reflow for 193-nm low-K1 lithography contacts

Patrick Montgomery, Kevin Lucas, Kirk Strozewski, Lena Zavyalova, Grozdan Grozev, Mario Reybrouck, Plamen Tzviatkov, Mireille Maenhoudt

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485186

KEYWORDS: Lithography, Semiconducting wafers, Etching, Optical lithography, Photoresist processing, Photomasks, Cadmium, Binary data, Polymers, 193nm lithography

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Proceedings Article | 22 August 2001 Paper

Automated method for overlay sample plan optimization based on spatial variation modeling

Xuemei Chen, Moshe Preil, Mathilde Le Goff-Dussable, Mireille Maenhoudt

Proceedings Volume 4344, (2001) https://doi.org/10.1117/12.436749

KEYWORDS: Error analysis, Semiconducting wafers, Chemical mechanical planarization, Overlay metrology, Statistical analysis, Tolerancing, Oxides, Statistical modeling, Metals, Data modeling

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Proceedings Article | 26 April 2001 Paper

Lithography aspects of dual-damascene interconnect technology

Mireille Maenhoudt, Diziana Van Goidsenhoven, Ivan Pollentier, Kurt Ronse, Muriel Lepage, Herbert Struyf, Marleen Van Hove

Proceedings Volume 4404, (2001) https://doi.org/10.1117/12.425203

KEYWORDS: Etching, Photomasks, Oxides, Dielectrics, Reflectivity, Lithography, Critical dimension metrology, Copper, Electroluminescence, Metals

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Proceedings Article | 5 July 2000 Paper

Status of ArF lithography for the 130-nm technology node

Kurt Ronse, Geert Vandenberghe, Patrick Jaenen, Christie Delvaux, Diziana Vangoidsenhoven, Frieda Van Roey, Ingrid Pollers, Mireille Maenhoudt, Anne-Marie Goethals, Ivan Pollentier, Bert Vleeming, Koen van Ingen Schenau, Barbra Heskamp, Guy Davies, Jo Finders, Ardavan Niroomand

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.389029

KEYWORDS: Lithography, 193nm lithography, Photomasks, Manufacturing, Etching, Reticles, Dry etching, Lenses, Oxides, Resolution enhancement technologies

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Proceedings Article | 5 July 2000 Paper

Limits of optical lithography

Mireille Maenhoudt, Staf Verhaegen, Kurt Ronse, Peter Zandbergen, Edward Muzio

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.389027

KEYWORDS: Critical dimension metrology, Photomasks, Reticles, Resolution enhancement technologies, 193nm lithography, Monte Carlo methods, Binary data, Lithographic illumination, Optical lithography, Lithography

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Proceedings Article | 26 July 1999 Paper

Feasibility of printing 0.1-um technology with optical lithography

Mireille Maenhoudt, Staf Verhaegen, Kurt Ronse, Donis Flagello, Bernd Geh, Winfried Kaiser

Proceedings Volume 3679, (1999) https://doi.org/10.1117/12.354347

KEYWORDS: Critical dimension metrology, Reticles, Electroluminescence, Printing, Lithography, Lithographic illumination, Photomasks, 193nm lithography, Binary data, Resolution enhancement technologies

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Proceedings Article | 26 July 1999 Paper

Novel aberration monitor for optical lithography

Peter Dirksen, Casper Juffermans, Rudy Pellens, Mireille Maenhoudt, Peter De Bisschop

Proceedings Volume 3679, (1999) https://doi.org/10.1117/12.354385

KEYWORDS: Monochromatic aberrations, Spherical lenses, Interferometry, Reticles, Binary data, Optical lithography, Zernike polynomials, Data modeling, Prototyping, Critical dimension metrology

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Proceedings Article | 28 April 1999 Paper

Recent trends and progress in deep-UV lithography

Kurt Ronse, Anne-Marie Goethals, Geert Vandenberghe, Mireille Maenhoudt

Proceedings Volume 3741, (1999) https://doi.org/10.1117/12.346897

KEYWORDS: 193nm lithography, Lithography, Photomasks, Reticles, Manufacturing, Optical lithography, Resolution enhancement technologies, Deep ultraviolet, Phase shifts, Lenses

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Proceedings Article | 29 June 1998 Paper

Lithographic process simulation for scanners

Andreas Erdmann, Michael Arnz, Mireille Maenhoudt, Jan Baselmans, Jan-Chris van Osnabrugge

Proceedings Volume 3334, (1998) https://doi.org/10.1117/12.310746

KEYWORDS: Scanners, Projection systems, Semiconducting wafers, Reticles, Lithography, Computer simulations, Image processing, Zernike polynomials, Monochromatic aberrations, Data processing

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Proceedings Article | 29 June 1998 Paper

CD control comparison of step-and-repeat versus step-and-scan DUV lithography for sub-0.25-um gate printing

Kurt Ronse, Mireille Maenhoudt, Thomas Marschner, Luc Van den hove, Bob Streefkerk, Jo Finders, Jan van Schoot, Paul Luehrmann, Anna Maria Minvielle

Proceedings Volume 3334, (1998) https://doi.org/10.1117/12.310789

KEYWORDS: Critical dimension metrology, Scanners, Reticles, Semiconducting wafers, Control systems, Lithography, Deep ultraviolet, Scanning electron microscopy, Manufacturing, Ions

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Proceedings Article | 7 July 1997 Paper

NA/sigma optimization strategies for an advanced DUV stepper applied to 0.25- and sub-0.25-um critical levels

Maaike Op de Beeck, Kurt Ronse, Kouros Ghandehari, Patrick Jaenen, Harry Botermans, Jo Finders, John Lilygren, Daniel Baker, Geert Vandenberghe, Peter De Bisschop, Mireille Maenhoudt, Luc Van den Hove

Proceedings Volume 3051, (1997) https://doi.org/10.1117/12.275973

KEYWORDS: Deep ultraviolet, Logic, Photoresist processing, Dry etching, Etching

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Showing 5 of 32 publications

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