Dr. Isabelle Servin Profile

Dr. Isabelle Servin

at CEA-LETI

SPIE Involvement:

Author

Publications (32)

Proceedings Article | 9 April 2024 Presentation + Paper

Life cycle assessment of etching processes for FDSOI transistors technologies

Mickaël Renaud, Aurélien Sarrazin, Joao Lopes-Barbosa, Yannick Rivoira, Isabelle Servin, François Boulard

Proceedings Volume 12958, 129580K (2024) https://doi.org/10.1117/12.3009969

KEYWORDS: Etching, Plasma etching, Plasma, Climate change, Gases, Transistors, Power consumption, Front end of line, Sustainable technology, CMOS technology

Read Abstract +

SPIE Journal Paper | 12 June 2023

Electron beam direct write lithography: the versatile ally of optical lithography

Fabien Laulagnet, Jacques-Alexandre Dallery, Laurent Pain, Michael May, Béatrice Hémard, Franck Garlet, Isabelle Servin, Chiara Sabbione

JM3, Vol. 22, Issue 04, 041404, (June 2023) https://doi.org/10.1117/12.10.1117/1.JMM.22.4.041404

KEYWORDS: Electron beam direct write lithography, Lithography, Semiconducting wafers, Electron beam lithography, Optical lithography, Optical alignment, Photoresist processing, Design and modelling, Overlay metrology, Silicon

Read Abstract +

Proceedings Article | 1 May 2023 Presentation + Paper

Chitosan as a water-based photoresist for DUV lithography

Isabelle Servin, Alexandre Teolis, Arnaud Bazin, Aurélien Sarrazin, Paule Durin, Olha Sysova, Corinne Gablin, Benoît Saudet, Didier Leonard, Olivier Soppera, Jean-Louis Leclercq, Yann Chevolot, Raluca Tiron, Thierry Delair, Stephane Trombotto

Proceedings Volume 12498, 1249818 (2023) https://doi.org/10.1117/12.2658423

KEYWORDS: Semiconducting wafers, Silicon, Deep ultraviolet, Lithography, Photoacid generators, Photoresist processing, Plasma etching, Etching, Optical lithography, Film thickness, Sustainability

Read Abstract +

Proceedings Article | 1 May 2023 Presentation + Paper

E-beam direct write lithography: the versatile ally of optical lithography

Fabien Laulagnet, Jacques-Alexandre Dallery, Laurent Pain, Michael May, Beatrice Hémard, Franck Garlet, Isabelle Servin, Chiara Sabbione

Proceedings Volume 12497, 1249706 (2023) https://doi.org/10.1117/12.2658273

KEYWORDS: Electron beam direct write lithography, Lithography, Semiconducting wafers, Electron beam lithography, Optical alignment, Overlay metrology, Optical lithography, Design and modelling, Photoresist processing, Deep ultraviolet

Read Abstract +

Proceedings Article | 13 October 2020 Presentation + Paper

Hybrid E-beam lithography and process improvement for nanodevice fabrication

I. Servin, F. Laulagnet, M. Cannac, Ahmed Gharbi, J-A. Dallery

Proceedings Volume 11518, 115180U (2020) https://doi.org/10.1117/12.2572868

KEYWORDS: Electron beam lithography, Lithography, Deep ultraviolet, Optical alignment, 193nm lithography, Electron beam direct write lithography, Semiconducting wafers, Nanostructures, Nanolithography, Electron beams

Read Abstract +

Proceedings Article | 16 August 2019 Presentation

Performance validation of Mapper’s FLX-1200 (Conference Presentation)

Marco Wieland, Jonathan Pradelles, Stéfan Landis, Laurent Pain, Guido Rademaker, Isabelle Servin, Guido De Boer, Pieter Brandt, Remco J. Jager, Stijn W. H. Steenbrink

Proceedings Volume 10958, 109580I (2019) https://doi.org/10.1117/12.2514920

KEYWORDS: Wafer-level optics, Semiconducting wafers, Critical dimension metrology, Electron beams, Optical alignment, Maskless lithography, Switching, Electron beam lithography, Standards development, Lithography

Read Abstract +

Mapper has installed its first product, the FLX–1200, at CEA-Leti in Grenoble (France). This is a maskless lithography system, based on massively parallel electron-beam writing with high-speed optical data transport for switching the electron beams. The FLX-1200, containing 65,000 parallel electron beams, has a 1 wph throughput at 300 mm wafers and is capable of patterning any resolution and any different type of structure all the way down to 28 nm node patterns. The system has an optical alignment system enabling mix-and-match with optical 193 nm immersion system using standard NVSM marks. Mapper Lithography and CEA-Leti are collaborating to develop turnkey solution for specific applications. In figure 1 the basic operation principle of the Mapper technology is shown. The electron optics have no central crossovers making them intrinsically insensitive to Coulomb forces (electron repulsion). The electron optics are modular and much cheaper than high-NA DUV optics, and can be replaced or upgraded in the field. The wafer exposure happens one column of fields at a time and always in the same direction. There is no need to meander. The focus and leveling is performed during stage fly-back to reduce metrology overhead. Each column of fields is aligned separately, with dedicated alignment targets. Figure 1, Basic operation of the Mapper technology. In figure 2 the way the beams are distributed over the electron optics slit is shown. The writing strategy is as follows: - There are up to 5 slits, staggered in X direction for reasons of wafer coverage. The approach is roughly analogous to an inkjet printer - Each slit area consists of 204 x 13 individual groups of beamlets, organized in a hexagonal array. - All beamlets are simultaneously horizontally deflected over a range of 2µm while the wafer is scanned vertically. - Each group comprises 49 individual beamlets (7x7). Each of the 49 beamlets can independently be switched on and off during exposure. - Each beamlet results in a Gaussian spot on the wafer with 25 nm FW50 diameter (10.6nm 1). - Total beamlet count will therefore equal 5 x 204x13 x 49 = 649,740. In the FLX-1200 and FLX-1300 the central 10% are used (one half slit area): 65,000 A more detailed description of the principles of operation is given in [2]. Figure 2,Distribution of the beams over the electron optics slit. The focus of presentation will be the reporting of the performance achieved of the tool installed at CEA-Leti during endurance runs in full tool configuration. This includes status of: - Exposure throughput - Achieved resolution and CD uniformity - Stitching performance - Matched Machine Overlay - Tool availability and uptime Also the different application areas for such a maskless system are discussed. In figure 3 a preview of a CD uniformity measurement result is shown. On a 300 mm wafer fields of 5mm x 5mm have been exposed containing 60nm dense lines and spaces. The main source of CD variation is caused by differences between the groups of beamlets. To measure this variation we have taken 824 SEM images, each taken of a pattern written by a different beam group. The result is shown in figure 3. The variation is 8nm 3s, and follows a Gaussian distribution of 6nm 3s. Figure 3, Distribution of 824 CD measurements results on 60nm dense lines and spaces

Proceedings Article | 19 September 2018 Paper

Performance validation of Mapper FLX-1200

Jonathan Pradelles, Yoann Blancquaert, Stefan Landis, Laurent Pain, Guido Rademaker, Isabelle Servin, Guido de Boer, Pieter Brandt, Michel Dansberg, Remco Jager, Jerry Peijster, Erwin Slot, Stijn Steenbrink, Marco Wieland

Proceedings Volume 10775, 1077507 (2018) https://doi.org/10.1117/12.2324054

KEYWORDS: Semiconducting wafers, Overlay metrology, Prototyping, Optical scanning, Scanning electron microscopy, Lithography, Line width roughness, Optical alignment, Electron beams, Silicon

Read Abstract +

Proceedings Article | 19 March 2018 Presentation + Paper

Performance validation of Mapper's FLX-1200

Marco Wieland, Guido de Boer, Pieter Brandt, Michel Dansberg, Remco Jager, Jerry Peijster, Erwin Slot, Stijn Steenbrink, Yoann Blancquaert, Stefan Landis, Laurent Pain, Jonathan Pradelles, Guido Rademaker, Isabelle Servin

Proceedings Volume 10584, 105840G (2018) https://doi.org/10.1117/12.2300816

KEYWORDS: Semiconducting wafers, Line width roughness, Optical alignment, Overlay metrology, Electron beams, Electron beam lithography

Read Abstract +

Proceedings Article | 19 March 2018 Presentation + Paper

Process development of a maskless N40 via level for security application with multi-beam lithography

Isabelle Servin, Patricia Pimenta-Barros, Arthur Bernadac, Jonathan Pradelles, Allan Germain, Yoann Blancquaert, Philippe Essomba, Stefan Landis, Gerard ten Berge, Marco Wieland, Philippe Brun

Proceedings Volume 10584, 1058411 (2018) https://doi.org/10.1117/12.2297162

KEYWORDS: Etching, Semiconducting wafers, Lithography, Scanning electron microscopy, System on a chip, Optical alignment, Electron beam lithography, Metals, Back end of line, Copper

Read Abstract +

Proceedings Article | 27 April 2017 Presentation

Overlay performance assessment of MAPPER's FLX-1200 (Conference Presentation)

Ludovic Lattard, Isabelle Servin, Jonathan Pradelles, Yoann Blancquaert, Guido Rademaker, Laurent Pain, Guido de Boer, Pieter Brandt, Michel Dansberg, Remco J. Jager, Jerry J. Peijster, Erwin Slot, Stijn W. H. Steenbrink, Niels Vergeer, Marco Wieland

Proceedings Volume 10144, 101440N (2017) https://doi.org/10.1117/12.2260878

KEYWORDS: Semiconducting wafers, Lithography, Electron beam lithography, Photomasks, Switching, Electron beams, Lithographic illumination, Integrated optics, Optical alignment, Wafer-level optics

Read Abstract +

Mapper Lithography has introduced its first product, the FLX–1200, which is installed at CEA-Leti in Grenoble (France). This is a mask less lithography system, based on massively parallel electron-beam writing with high-speed optical data transport for switching the electron beams. This FLX platform is initially targeted for 1 wph performance for 28 nm technology nodes, but can also be used for less demanding imaging. The electron source currently integrated is capable of scaling to 10 wph at the same resolution performance, which will be implemented by gradually upgrading the illumination optics. The system has an optical alignment system enabling mix-and-match with optical 193 nm immersion systems using standard NVSM marks. The tool at CEA-Leti is in-line with a Sokudo Duo clean track. Mapper Lithography and CEA-Leti are working in collaboration to develop turnkey solution for specific applications. At previous conferences we have presented imaging results including 28nm node resolution, cross wafer CDu of 2.5nm 3 and a throughput of half a wafer per hour, overhead times included. At this conference we will present results regarding the overlay performance of the FLX-1200. In figure 2 an initial result towards measuring the overlay performance of the FLX-1200 is shown. We have exposed a wafer twice without unloading the wafer in between exposures. In the first exposure half of a dense dot array is exposed. In the second exposure the remainder of the dense dot array is exposed. After development the wafer has been inspected using a CD-SEM at 480 locations distributed over an area of 100mm x 100mm. For each SEM image the shift of the pattern written in the first exposure relative to the pattern written in the second exposure is measured. Cross wafer this shift is 7 nm u+3s in X and 5 nm u+3s in Y. The next step is to evaluate the impact of unloading and loading of the wafer in between exposures. At the conference the latest results will be presented.

Proceedings Article | 10 April 2017 Presentation + Paper

Nanoimprint, DSA, and multi-beam lithography: patterning technologies with new integration challenges

S. Landis, H. Teyssedre, G. Claveau, I. Servin, F. Delachat, M. L. Pourteau, A. Gharbi, P. Pimenta Barros, R. Tiron, L. Nouri, N. Possemé, M. May, P. Brianceau, S. Barnola, Y. Blancquaert, J. Pradelles, P. Essomba, A. Bernadac, B. Dal'zotto, S. Bos, M. Argoud, G. Chamiot-Maitral, A. Sarrazin, C. Tallaron, C. Lapeyre, L. Pain

Proceedings Volume 10149, 101490K (2017) https://doi.org/10.1117/12.2259966

KEYWORDS: Directed self assembly, Lithography, Line width roughness, Nanoimprint lithography, Semiconducting wafers, Etching, Electron beam lithography, System on a chip, Critical dimension metrology, Photoresist processing

Read Abstract +

Proceedings Article | 27 March 2017 Paper

DSA process window expansion with novel DSA track hardware

Masahiko Harumoto, Harold Stokes, Yuji Tanaka, Koji Kaneyama, Chalres Pieczulewski, Masaya Asai, Maxime Argoud, Isabelle Servin, Gaëlle Chamiot-Maitral, Guillaume Claveau, Raluca Tiron, Ian Cayrefourcq

Proceedings Volume 10146, 101461X (2017) https://doi.org/10.1117/12.2257945

KEYWORDS: Directed self assembly, Optical lithography, Thin film coatings, Line width roughness, Annealing, Oxygen, Scanning electron microscopy, Atmospheric modeling, Semiconducting wafers, Polymers

Read Abstract +

Proceedings Article | 27 March 2017 Presentation + Paper

A high chi track-compatible DSA for sub-10nm L/S patterning

Douglas Guerrero, Kaumba Sakavuyi, Kui Xu, Ahmed Gharbi, Raluca Tiron, Isabelle Servin, Laurent Pain, Guillaume Claveau, Harold Stokes, Masahiko Harumoto, Célia Nicolet, Xavier Chevalier

Proceedings Volume 10146, 101460W (2017) https://doi.org/10.1117/12.2261094

KEYWORDS: Directed self assembly, Annealing, Optical lithography, Polymers, Scanning electron microscopy, Semiconducting wafers, Silicon, Line width roughness, Glasses, Ultraviolet radiation

Read Abstract +

Proceedings Article | 1 April 2016 Paper

Investigation of coat-develop track system for placement error of contact hole shrink process

Masahiko Harumoto, Harold Stokes, Yuji Tanaka, Koji Kaneyama, Charles Pieczulewski, Masaya Asai, Isabelle Servin, Maxime Argoud, Ahmed Gharbi, Celine Lapeyre, Raluca Tiron, Cedric Monget

Proceedings Volume 9777, 97770O (2016) https://doi.org/10.1117/12.2219925

KEYWORDS: Lithography, Semiconducting wafers, Directed self assembly, Image processing, Scanning electron microscopy, Etching, Immersion lithography, Optical lithography, Annealing, Distance measurement

Read Abstract +

Proceedings Article | 22 March 2016 Paper

Non-CAR resists and advanced materials for Massively Parallel E-Beam Direct Write process integration

Marie-Line Pourteau, Isabelle Servin, Kévin Lepinay, Cyrille Essomba, Bernard Dal'Zotto, Jonathan Pradelles, Ludovic Lattard, Pieter Brandt, Marco Wieland

Proceedings Volume 9777, 977713 (2016) https://doi.org/10.1117/12.2218884

KEYWORDS: Line width roughness, Lithography, Electron beam lithography, Electron beams, Scanning electron microscopy, Etching, Semiconducting wafers, Neodymium, Silicon, Surface conduction electron emitter displays

Read Abstract +

Proceedings Article | 22 March 2016 Paper

Process highlights to enhance DSA contact patterning performances

A. Gharbi, R. Tiron, M. Argoud, G. Chamiot-Maitral, A. Fouquet, C. Lapeyre, P. Pimenta Barros, A. Sarrazin, I. Servin, F. Delachat, S. Bos, S. Bérard-Bergery, J. Hazart, X. Chevalier, C. Nicolet, C. Navarro, I. Cayrefourcq, S. Bouanani, C. Monget

Proceedings Volume 9777, 97770T (2016) https://doi.org/10.1117/12.2219210

KEYWORDS: Directed self assembly, Optical lithography, Inspection, Lithography, Etching, Semiconducting wafers, Scanning electron microscopy, Defect detection, Critical dimension metrology, Materials processing, Photomasks, Picosecond phenomena, Annealing, Molecular self-assembly, Image processing

Read Abstract +

Proceedings Article | 19 March 2015 Paper

"Fast" and "thick" e-beam resists exposed with multi-beam tool at 5 keV for implants and mature nodes: experimental and simulated model study

Aurélien Fay, Ndeye Thiam, Marie-Laure Cordini, Isabelle Servin, Christophe Constancias, Ludovic Lattard, Laurent Pain

Proceedings Volume 9423, 94231Q (2015) https://doi.org/10.1117/12.2085832

KEYWORDS: Lithography, Electron beam lithography, Silicon, Point spread functions, Scanning electron microscopy, Critical dimension metrology, 3D modeling, Information technology, Etching, Monte Carlo methods

Read Abstract +

Proceedings Article | 19 March 2015 Paper

Ready for multi-beam exposure at 5kV on MAPPER tool: lithographic and process integration performances of advanced resists/stack

Isabelle Servin, Ndeye Arame Thiam, Patricia Pimenta-Barros, Marie-Line Pourteau, Armel-Petit Mebiene, Julien Jussot, Jonathan Pradelles, Philippe Essomba, Ludovic Lattard, Pieter Brandt, Marco Wieland

Proceedings Volume 9423, 94231C (2015) https://doi.org/10.1117/12.2085915

KEYWORDS: Line width roughness, Lithography, Etching, Electron beam lithography, System on a chip, Metals, Scanning electron microscopy, Silicon, Resistance, Extreme ultraviolet

Read Abstract +

Proceedings Article | 17 March 2015 Paper

DSA planarization approach to solve pattern density issue

P. Pimenta Barros, A. Gharbi, Aurélien Sarrazin, R. Tiron, N. Posseme, S. Barnola, S. Bos, C. Tallaron, G. Claveau, X. Chevalier, M. Argoud, Isabelle Servin, C. Navarro, Célia Nicolet, C. Lapeyre, C. Monget

Proceedings Volume 9428, 94280D (2015) https://doi.org/10.1117/12.2086810

KEYWORDS: Polymethylmethacrylate, Etching, Critical dimension metrology, Picosecond phenomena, Semiconducting wafers, Chemistry, Scanning electron microscopy, Carbon monoxide, Dry etching, Directed self assembly

Read Abstract +

Proceedings Article | 28 March 2014 Paper

300mm pilot line DSA contact hole process stability

M. Argoud, I. Servin, A. Gharbi, P. Pimenta Barros, K. Jullian, M. Sanche, G. Chamiot-Maitral, S. Barnola, R. Tiron, C. Navarro, X. Chevalier, C. Nicolet, G. Fleury, G. Hadziioannou, M. Asai, C. Pieczulewski

Proceedings Volume 9049, 904929 (2014) https://doi.org/10.1117/12.2046315

KEYWORDS: Polymethylmethacrylate, Etching, Lithography, Critical dimension metrology, Semiconductors, Electron beam lithography, Semiconducting wafers, Silicon, High volume manufacturing, Directed self assembly

Read Abstract +

Proceedings Article | 28 March 2014 Paper

Etch challenges for DSA implementation in CMOS via patterning

P. Pimenta Barros, S. Barnola, A. Gharbi, M. Argoud, I. Servin, R. Tiron, X. Chevalier, C. Navarro, C. Nicolet, C. Lapeyre, C. Monget, E. Martinez

Proceedings Volume 9054, 90540G (2014) https://doi.org/10.1117/12.2046267

KEYWORDS: Etching, Polymethylmethacrylate, Picosecond phenomena, Plasma, Chemistry, Optical lithography, Argon, Dry etching, Dielectrics, Directed self assembly

Read Abstract +

Proceedings Article | 26 March 2013 Paper

The potential of block copolymer’s directed self-assembly for contact hole shrink and contact multiplication

R. Tiron, A. Gharbi, M. Argoud, X. Chevalier, J. Belledent, P. Pimmenta Barros, I. Servin, C. Navarro, G. Cunge, S. Barnola, L. Pain, M. Asai, C. Pieczulewski

Proceedings Volume 8680, 868012 (2013) https://doi.org/10.1117/12.2011477

KEYWORDS: Etching, Polymethylmethacrylate, Picosecond phenomena, Lithography, Polymers, 193nm lithography, Critical dimension metrology, Oxygen, Neodymium, Directed self assembly

Read Abstract +

Proceedings Article | 19 May 2011 Paper

193-nm radiation durability study of MoSi binary mask and resulting lithographic performance

Isabelle Servin, Jérôme Belledent, Laurent Pain, Brid Connolly, Martin Sczyrba, Matt Lamantia

Proceedings Volume 8081, 80810X (2011) https://doi.org/10.1117/12.899173

KEYWORDS: Photomasks, Semiconducting wafers, Critical dimension metrology, Scanners, SRAF, Binary data, Lithography, Cadmium, Metrology, Scattering

Read Abstract +

Proceedings Article | 25 September 2010 Paper

Aging study in advanced photomasks: impact of EFM effects on lithographic performance with MoSi binary and 6% attenuated PSM masks

I. Servin, J. Belledent, M. O. Fialeyre, B. Connolly, M. Lamantia, M. Sczyrba, M. K. Jullian, B. Le Gratiet, L. Pain

Proceedings Volume 7823, 78230N (2010) https://doi.org/10.1117/12.864529

KEYWORDS: Photomasks, Critical dimension metrology, Semiconducting wafers, Reticles, Binary data, Scanning electron microscopy, Scanners, Lithography, Optical proximity correction, Metrology

Read Abstract +

Proceedings Article | 27 May 2009 Paper

Mask contribution on CD and OVL errors budgets for double patterning lithography

I. Servin, C. Lapeyre, S. Barnola, B. Connolly, R. Ploss, K. Nakagawa, P. Buck, M. McCallum

Proceedings Volume 7470, 747009 (2009) https://doi.org/10.1117/12.835171

KEYWORDS: Photomasks, Semiconducting wafers, Critical dimension metrology, Reticles, Double patterning technology, Pellicles, Lithography, Image registration, Optical alignment, Scanners

Read Abstract +

Proceedings Article | 11 May 2009 Paper

European MEDEA+ CRYSTAL project: DFM photomasks inputs for EDA workflow task force

Eric Beisser, Michel Tissier, David Au, Stéphane Bonniol, Patrick Garcia, Philippe Morey-Chaisemartin, Dominique Sadran, Isabelle Servin, Michel Tabusse

Proceedings Volume 7379, 73790W (2009) https://doi.org/10.1117/12.824273

KEYWORDS: Photomasks, Design for manufacturing, Manufacturing, Databases, Computer aided design, Lithography, Design for manufacturability, Inspection, Electronic design automation, Silicon

Read Abstract +

Proceedings Article | 16 March 2009 Paper

Impact of CD and overlay errors on double-patterning processes

Céline Lapeyre, Sébastien Barnola, Isabelle Servin, Stéphanie Gaugirana, Vincent Salvetat, Nobutaka Magome, Andrew Hazelton, Martin McCallum

Proceedings Volume 7274, 72740W (2009) https://doi.org/10.1117/12.814165

KEYWORDS: Double patterning technology, Etching, Semiconducting wafers, Lithography, Photomasks, Image processing, Photoresist processing, Reticles, Line width roughness, Overlay metrology

Read Abstract +

Proceedings Article | 16 March 2009 Paper

Integration of dry etching steps for double patterning and spacer patterning processes

S. Barnola, C. Lapeyre, I. Servin, C. Arvet, P. Maury, L. Mage

Proceedings Volume 7274, 72741X (2009) https://doi.org/10.1117/12.814856

KEYWORDS: Etching, Carbon, Double patterning technology, Photomasks, Optical lithography, Chemistry, Lithography, Critical dimension metrology, Plasma, Scanning electron microscopy

Read Abstract +

SPIE Journal Paper | 1 January 2009

Double-patterning requirements for optical lithography and prospects for optical extension without double patterning

Andrew Hazelton, Shinji Wakamoto, Shigeru Hirukawa, Martin McCallum, Nobutaka Magome, Jun Ishikawa, Céline Lapeyre, Isabelle Guilmeau, Sébastien Barnola, Stéphanie Gaugiran

JM3, Vol. 8, Issue 01, 011003, (January 2009) https://doi.org/10.1117/12.10.1117/1.3023077

KEYWORDS: Double patterning technology, Photomasks, Etching, Reticles, Lithography, Optical lithography, Semiconducting wafers, Image processing, Photoresist processing, Deposition processes

Read Abstract +

Proceedings Article | 7 March 2008 Paper

Double patterning requirements for optical lithography and prospects for optical extension without double patterning

Andrew Hazelton, Shinji Wakamoto, Shigeru Hirukawa, Martin McCallum, Nobutaka Magome, Jun Ishikawa, Céline Lapeyre, Isabelle Guilmeau, Sébastien Barnola, Stéphanie Gaugiran

Proceedings Volume 6924, 69240R (2008) https://doi.org/10.1117/12.771914

KEYWORDS: Double patterning technology, Photomasks, Etching, Reticles, Semiconducting wafers, Lithography, Image processing, Photoresist processing, Optical lithography, Deposition processes

Read Abstract +

Proceedings Article | 4 May 2005 Paper

Comparison between organic spin-on BARC and carbon-containing CVD stack for 65-nm gate patterning

Jean-Damien Chapon, Catherine Chaton, Pascal Gouraud, Marcel Broekaart, Scott Warrick, Isabelle Guilmeau, Yorick Trouiller, Jerome Belledent

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.601742

KEYWORDS: Chemical vapor deposition, Etching, Critical dimension metrology, Reflectivity, Carbon, Line width roughness, Semiconducting wafers, Optical lithography, Oxides, Dielectrics

Read Abstract +

Proceedings Article | 14 May 2004 Paper

Evaluation of wet-developable KrF organic BARC to improve CD uniformity for implant application

Isabelle Guilmeau, Alice Guerrero, Vincent Blain, Stephanie Kremer, Vincent Vachellerie, Damien Lenoble, Patricia Nogueira, Sebastien Mougel, Jean-Damien Chapon

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.538061

KEYWORDS: Critical dimension metrology, Oxides, Scanning electron microscopy, Semiconducting wafers, Lithography, Optical lithography, Silicon, Scatterometry, Photoresist processing, Electroluminescence

Read Abstract +

Showing 5 of 32 publications

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years