Roberto Fallica received his master's degree in Electronics Engineering from Politecnico di Milano (Italy) in 2007 and completed the PhD school in Nanotechnology from University of Milano-Bicocca in 2012 with a thesis on the characterization of phase-change chalcogenide nanowires for nonvolatile data storage. In 2014 he was postdoc researcher at the Paul Scherrer Institute (Switzerland) working at the dedicated EUV/X-ray interference lithography and X-ray absorption spectroscopy beamline for characterization and patterning of nanoscale photoresist structures. Since 2018, he is staff researcher in the Advanced Patterning department of IMEC (Belgium). His duties include the screening of lithography materials and stacks to develop the technology that will enable future semiconductor devices in BEOL (back-end of line) such as DRAM (storage layer) and logic (metalization). For this purpose he is focusing on characterization of EUV litho stack materials (photoresist and underlayers) especially for defect mitigation by improving adhesion. In addition, he is in charge of measuring fundamental physical properties of EUV photoresists such as electron blur and electronic processes by photoemission spectroscopy and photocurrent. He is member of SPIE since 2016.